文献
J-GLOBAL ID:200902212399911272
整理番号:08A0420285
金属有機物化学蒸着によるウェハ接合したサファイア基板上の多結晶性AlN上におけるInGaN/GaN多重量子井戸とLED成長
InGaN/GaN multi-quantum well and LED growth on wafer-bonded sapphire-on-polycrystalline AlN substrates by metalorganic chemical vapor deposition
著者 (12件):
PINNINGTON T.
(Aonex Technologies Inc.,129 N. Hill Ave., Suite 108, Pasadena, CA 91106, USA)
,
KOLESKE D.d.
(Sandia National Laboratories, Albuquerque, NM 87185, USA)
,
ZAHLER J.m.
(Aonex Technologies Inc.,129 N. Hill Ave., Suite 108, Pasadena, CA 91106, USA)
,
LADOUS C.
(Aonex Technologies Inc.,129 N. Hill Ave., Suite 108, Pasadena, CA 91106, USA)
,
PARK Y.-b.
(Aonex Technologies Inc.,129 N. Hill Ave., Suite 108, Pasadena, CA 91106, USA)
,
CRAWFORD M.h.
(Sandia National Laboratories, Albuquerque, NM 87185, USA)
,
BANAS M.
(Sandia National Laboratories, Albuquerque, NM 87185, USA)
,
THALER G.
(Sandia National Laboratories, Albuquerque, NM 87185, USA)
,
RUSSELL M.j.
(Sandia National Laboratories, Albuquerque, NM 87185, USA)
,
OLSON S.m.
(Aonex Technologies Inc.,129 N. Hill Ave., Suite 108, Pasadena, CA 91106, USA)
,
ATWATER Harry A.
(Aonex Technologies Inc.,129 N. Hill Ave., Suite 108, Pasadena, CA 91106, USA)
,
ATWATER Harry A.
(T.J. Watson Laboratories of Applied Physics, California Inst. of Technol., Pasadena, CA 91106, USA)
資料名:
Journal of Crystal Growth
(Journal of Crystal Growth)
巻:
310
号:
10
ページ:
2514-2519
発行年:
2008年05月01日
JST資料番号:
B0942A
ISSN:
0022-0248
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)