文献
J-GLOBAL ID:200902274992403661
整理番号:05A1038290
AlGaN/GaNヘテロ構造トランジスタのナノメートルスケールSchottkyゲートエッジでの電子のトンネル注入とその計算機シミュレーション
Tunneling Injection of Electrons at Nanometer-Scale Schottky Gate Edge of AlGaN/GaN Heterostructure Transistors and Its Computer Simulation
著者 (4件):
KOTANI Junji
(Res. Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Sci. and Technol. ...)
,
KASAI Seiya
(Res. Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Sci. and Technol. ...)
,
HASEGAWA Hideki
(Res. Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Sci. and Technol. ...)
,
HASHIZUME Tamotsu
(Res. Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Sci. and Technol. ...)
資料名:
e-Journal of Surface Science and Nanotechnology (Web)
(e-Journal of Surface Science and Nanotechnology (Web))
巻:
3
ページ:
433-438 (J-STAGE)
発行年:
2005年
JST資料番号:
U0016A
ISSN:
1348-0391
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
日本 (JPN)
言語:
英語 (EN)