文献
J-GLOBAL ID:201102213454692768
整理番号:11A0807127
Siにおけるフォノン位相緩和動力学のドーピングタイプ依存
Doping-type dependence of phonon dephasing dynamics in Si
著者 (9件):
KATO Keiko
(NTT Basic Res. Laboratories, Nippon Telegraph and Telephone Corp., 3-1 Morinosato Wakamiya, Atsugi, Kanagawa ...)
,
OGURI Katsuya
(NTT Basic Res. Laboratories, Nippon Telegraph and Telephone Corp., 3-1 Morinosato Wakamiya, Atsugi, Kanagawa ...)
,
ISHIZAWA Atsushi
(NTT Basic Res. Laboratories, Nippon Telegraph and Telephone Corp., 3-1 Morinosato Wakamiya, Atsugi, Kanagawa ...)
,
TATENO Kouta
(NTT Basic Res. Laboratories, Nippon Telegraph and Telephone Corp., 3-1 Morinosato Wakamiya, Atsugi, Kanagawa ...)
,
TAWARA Takehiko
(NTT Basic Res. Laboratories, Nippon Telegraph and Telephone Corp., 3-1 Morinosato Wakamiya, Atsugi, Kanagawa ...)
,
GOTOH Hideki
(NTT Basic Res. Laboratories, Nippon Telegraph and Telephone Corp., 3-1 Morinosato Wakamiya, Atsugi, Kanagawa ...)
,
KITAJIMA Masahiro
(Dep. of Applied Physics, School of Applied Sci., National Defense Acad. of Japan, Hashirimizu 1-10-20, Yokosuka ...)
,
NAKANO Hidetoshi
(NTT Basic Res. Laboratories, Nippon Telegraph and Telephone Corp., 3-1 Morinosato Wakamiya, Atsugi, Kanagawa ...)
,
SOGAWA Tetsuomi
(NTT Basic Res. Laboratories, Nippon Telegraph and Telephone Corp., 3-1 Morinosato Wakamiya, Atsugi, Kanagawa ...)
資料名:
Applied Physics Letters
(Applied Physics Letters)
巻:
98
号:
14
ページ:
141904
発行年:
2011年04月04日
JST資料番号:
H0613A
ISSN:
0003-6951
CODEN:
APPLAB
資料種別:
逐次刊行物 (A)
記事区分:
短報
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)