文献
J-GLOBAL ID:201602240621405533
整理番号:16A1006839
RFマグネトロンスパッタリングデポジションで成長した(Na,K)NbO3薄膜の構造と電気的性質に与えるアニーリング温度の効果
Effects of annealing temperature on structure and electrical properties of (Na, K)NbO3 thin films grown by RF magnetron sputtering deposition
著者 (10件):
Huang Jiewen
(Department of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing, Jiangsu, China)
,
Liu Jinsong
(Department of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing, Jiangsu, China)
,
Liu Jinsong
(State Key Laboratory of Mechanics and Control of Mechanical Structures, Nanjing University of Aeronautics and Astronautics, Nanjing, Jiangsu, China)
,
Li Ziquan
(Department of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing, Jiangsu, China)
,
Li Ziquan
(Chemical Engineering Department, Nanjing College of Chemical Technology, Nanjing, Jiangsu, China)
,
Zhu Kongjun
(State Key Laboratory of Mechanics and Control of Mechanical Structures, Nanjing University of Aeronautics and Astronautics, Nanjing, Jiangsu, China)
,
Wang Bijun
(Department of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing, Jiangsu, China)
,
Gu Qinlin
(State Key Laboratory of Mechanics and Control of Mechanical Structures, Nanjing University of Aeronautics and Astronautics, Nanjing, Jiangsu, China)
,
Feng Bing
(Department of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing, Jiangsu, China)
,
Qiu Jinhao
(State Key Laboratory of Mechanics and Control of Mechanical Structures, Nanjing University of Aeronautics and Astronautics, Nanjing, Jiangsu, China)
資料名:
Journal of Materials Science. Materials in Electronics
(Journal of Materials Science. Materials in Electronics)
巻:
27
号:
1
ページ:
899-905
発行年:
2016年01月
JST資料番号:
W0003A
ISSN:
0957-4522
CODEN:
JMTSAS
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
ドイツ (DEU)
言語:
英語 (EN)