文献
J-GLOBAL ID:201602270375398905
整理番号:16A0540340
ウエハダイシング後のGaNエピタキシャル層の結晶性評価
Evaluation of crystallinity of GaN epitaxial layer after wafer dicing
著者 (6件):
Taguchi Hideyuki
(Physical Analysis & Evaluation Center, Electronics Division, Kobelco Research Institute, Inc., 1-5-5 Takatsukadai, Nishi-ku, Kobe 651-2271, Japan)
,
Taguchi Hideyuki
(Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan)
,
Miyake Shugo
(Physical Analysis & Evaluation Center, Electronics Division, Kobelco Research Institute, Inc., 1-5-5 Takatsukadai, Nishi-ku, Kobe 651-2271, Japan)
,
Suzuki Atsushi
(Department of Materials Science and Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan)
,
Kamiyama Satoshi
(Department of Materials Science and Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan)
,
Fujiwara Yasufumi
(Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan)
資料名:
Materials Science in Semiconductor Processing
(Materials Science in Semiconductor Processing)
巻:
41
ページ:
89-91
発行年:
2016年01月
JST資料番号:
W1055A
ISSN:
1369-8001
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)