文献
J-GLOBAL ID:201702210622613659
整理番号:17A0451448
InAlN薄膜における歪マッピングと転位分布のための相互相関に基づく高分解能電子後方散乱回折と電子チャネリングコントラストイメージング【Powered by NICT】
Cross-correlation based high resolution electron backscatter diffraction and electron channelling contrast imaging for strain mapping and dislocation distributions in InAlN thin films
著者 (7件):
Vilalta-Clemente A.
(Department of Materials, University of Oxford, Oxford OX1 3PH, United Kingdom)
,
Naresh-Kumar G.
(Department of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG, United Kingdom)
,
Nouf-Allehiani M.
(Department of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG, United Kingdom)
,
Gamarra P.
(III-V Lab, Thales Research and Technology, 1 Av. Augustin Fresnel 91767, Palaiseau, France)
,
di Forte-Poisson M.A.
(III-V Lab, Thales Research and Technology, 1 Av. Augustin Fresnel 91767, Palaiseau, France)
,
Trager-Cowan C.
(Department of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG, United Kingdom)
,
Wilkinson A.J.
(Department of Materials, University of Oxford, Oxford OX1 3PH, United Kingdom)
資料名:
Acta Materialia
(Acta Materialia)
巻:
125
ページ:
125-135
発行年:
2017年
JST資料番号:
A0316A
ISSN:
1359-6454
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)