文献
J-GLOBAL ID:201702232069344082
整理番号:17A0475394
低温1cm~2V~ 1S~ 1を超える平衡正孔および電子移動度のためのポリマー/自己集合単分子層で修飾したInO_xハイブリッド構造に基づく溶液プロセスで作製する両極性電界効果トランジスタ【Powered by NICT】
Low temperature, solution-processed ambipolar field-effect transistors based on polymer/self-assembled monolayer modified InOx hybrid structures for balanced hole and electron mobilities exceeding 1 cm2 V-1 s-1
著者 (9件):
Sun Sheng
(State Key Laboratory of Luminescent Materials & Devices, South China University of Technology, Guangzhou 510640, China)
,
Li Yuzhi
(State Key Laboratory of Luminescent Materials & Devices, South China University of Technology, Guangzhou 510640, China)
,
Lan Linfeng
(State Key Laboratory of Luminescent Materials & Devices, South China University of Technology, Guangzhou 510640, China)
,
Xiao Peng
(State Key Laboratory of Luminescent Materials & Devices, South China University of Technology, Guangzhou 510640, China)
,
Chen Zhenhui
(State Key Laboratory of Luminescent Materials & Devices, South China University of Technology, Guangzhou 510640, China)
,
Lin Zhenguo
(State Key Laboratory of Luminescent Materials & Devices, South China University of Technology, Guangzhou 510640, China)
,
Chen Junwu
(State Key Laboratory of Luminescent Materials & Devices, South China University of Technology, Guangzhou 510640, China)
,
Peng Junbiao
(State Key Laboratory of Luminescent Materials & Devices, South China University of Technology, Guangzhou 510640, China)
,
Cao Yong
(State Key Laboratory of Luminescent Materials & Devices, South China University of Technology, Guangzhou 510640, China)
資料名:
Organic Electronics
(Organic Electronics)
巻:
43
ページ:
162-166
発行年:
2017年
JST資料番号:
W1352A
ISSN:
1566-1199
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)