文献
J-GLOBAL ID:201702246810919097
整理番号:17A0385775
β-Ga2O3(100)単結晶基板上のSchottkyバリアダイオードとその温度依存電気特性
Schottky barrier diode based on β-Ga2O3 (100) single crystal substrate and its temperature-dependent electrical characteristics
著者 (10件):
He Qiming
(Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China)
,
Mu Wenxiang
(State Key Laboratory of Crystal Materials, Key Laboratory of Functional Crystal Materials and Device, Shandong University, Jinan 250100, China)
,
Dong Hang
(Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China)
,
Long Shibing
(Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China)
,
Jia Zhitai
(State Key Laboratory of Crystal Materials, Key Laboratory of Functional Crystal Materials and Device, Shandong University, Jinan 250100, China)
,
Lv Hangbing
(Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China)
,
Liu Qi
(Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China)
,
Tang Minghua
(Key Laboratory of Key Film Materials and Application for Equipments (Hunan Province), School of Material Sciences and Engineering, Xiangtan University, Xiangtan 411105, Hunan, China)
,
Tao Xutang
(State Key Laboratory of Crystal Materials, Key Laboratory of Functional Crystal Materials and Device, Shandong University, Jinan 250100, China)
,
Liu Ming
(Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China)
資料名:
Applied Physics Letters
(Applied Physics Letters)
巻:
110
号:
9
ページ:
093503-093503-5
発行年:
2017年02月27日
JST資料番号:
H0613A
ISSN:
0003-6951
CODEN:
APPLAB
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)