文献
J-GLOBAL ID:201702252121212398
整理番号:17A0443393
埋込みリッジAWGマルチプレクサをモノリシックに集積したSAG法により作製したEMLアレイ【Powered by NICT】
EML Array fabricated by SAG technique monolithically integrated with a buried ridge AWG multiplexer
著者 (6件):
Xu Junjie
(Key Laboratory of Semiconductor Materials, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People’s Republic of China)
,
Liang Song
(Key Laboratory of Semiconductor Materials, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People’s Republic of China)
,
Zhang Zhike
(State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People’s Republic of China)
,
An Junming
(State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People’s Republic of China)
,
Zhu Hongliang
(Key Laboratory of Semiconductor Materials, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People’s Republic of China)
,
Wang Wei
(Key Laboratory of Semiconductor Materials, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People’s Republic of China)
資料名:
Optics & Laser Technology
(Optics & Laser Technology)
巻:
91
ページ:
46-50
発行年:
2017年
JST資料番号:
D0245B
ISSN:
0030-3992
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)