文献
J-GLOBAL ID:201702253687217009
整理番号:17A0852407
イオン化増強AlGaNヘテロ構造アバランシェフォトダイオード【Powered by NICT】
Ionization-Enhanced AlGaN Heterostructure Avalanche Photodiodes
著者 (8件):
Shao Z. G.
(Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, China)
,
Yang X. F.
(Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, China)
,
You H. F.
(Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, China)
,
Chen D. J.
(Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, China)
,
Lu H.
(Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, China)
,
Zhang R.
(Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, China)
,
Zheng Y. D.
(Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, China)
,
Dong K. X.
(School of Mechanical and Electronic Engineering, Chuzhou University, Chuzhou, China)
資料名:
IEEE Electron Device Letters
(IEEE Electron Device Letters)
巻:
38
号:
4
ページ:
485-488
発行年:
2017年
JST資料番号:
B0344B
ISSN:
0741-3106
CODEN:
EDLEDZ
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)