文献
J-GLOBAL ID:201702268400436852
整理番号:17A0361464
Fe汚染されたp型多結晶Siインゴットの少数キャリア寿命の改善へのSnドーピングの影響【Powered by NICT】
Effect of Sn doping on improvement of minority carrier lifetime of Fe contaminated p-type multi-crystalline Si ingot
著者 (7件):
Sun Jifei
(Key Laboratory of Novel Thin Film Solar Cells, Institute of Applied Technology, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, PR China)
,
Sun Jifei
(University of Science and Technology of China, Hefei 230026, PR China)
,
He Qiuxiang
(Key Laboratory of Novel Thin Film Solar Cells, Institute of Applied Technology, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, PR China)
,
Ban Boyuan
(Key Laboratory of Novel Thin Film Solar Cells, Institute of Applied Technology, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, PR China)
,
Bai Xiaolong
(Key Laboratory of Novel Thin Film Solar Cells, Institute of Applied Technology, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, PR China)
,
Li Jingwei
(Key Laboratory of Novel Thin Film Solar Cells, Institute of Applied Technology, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, PR China)
,
Chen Jian
(Key Laboratory of Novel Thin Film Solar Cells, Institute of Applied Technology, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, PR China)
資料名:
Journal of Crystal Growth
(Journal of Crystal Growth)
巻:
458
ページ:
66-71
発行年:
2017年
JST資料番号:
B0942A
ISSN:
0022-0248
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)