文献
J-GLOBAL ID:201702272355970490
整理番号:17A0323173
徐冷パターンを有する電子ビーム融解によるmc-SiにおけるSiC堆積作用と炭素移動【Powered by NICT】
SiC sedimentation and carbon migration in mc-Si by election beam melting with slow cooling pattern
著者 (12件):
Qin Shiqiang
(School of Materials Science and Engineering, Dalian University of Technology, Dalian 116023, China)
,
Qin Shiqiang
(Key Laboratory for Solar Energy Photovoltaic System of Liaoning Province, Dalian 116023, China)
,
Jiang Dachuan
(School of Materials Science and Engineering, Dalian University of Technology, Dalian 116023, China)
,
Jiang Dachuan
(Key Laboratory for Solar Energy Photovoltaic System of Liaoning Province, Dalian 116023, China)
,
Li Pengting
(School of Materials Science and Engineering, Dalian University of Technology, Dalian 116023, China)
,
Li Pengting
(Key Laboratory for Solar Energy Photovoltaic System of Liaoning Province, Dalian 116023, China)
,
Shi Shuang
(School of Materials Science and Engineering, Dalian University of Technology, Dalian 116023, China)
,
Shi Shuang
(Key Laboratory for Solar Energy Photovoltaic System of Liaoning Province, Dalian 116023, China)
,
Guo Xiaoliang
(New Energy Materials and Technology Institute Co., Ltd. of Dalian University of Technology (Qingdao), Qingdao 266000, China)
,
An Guangye
(New Energy Materials and Technology Institute Co., Ltd. of Dalian University of Technology (Qingdao), Qingdao 266000, China)
,
Tan Yi
(School of Materials Science and Engineering, Dalian University of Technology, Dalian 116023, China)
,
Tan Yi
(Key Laboratory for Solar Energy Photovoltaic System of Liaoning Province, Dalian 116023, China)
資料名:
Materials Science in Semiconductor Processing
(Materials Science in Semiconductor Processing)
巻:
53
ページ:
1-7
発行年:
2016年
JST資料番号:
W1055A
ISSN:
1369-8001
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)