文献
J-GLOBAL ID:201702279878781681
整理番号:17A0214269
p型In_0 65Ga_0 35GaAs_0.4Sb_0 6とGe-0.93Sn_0 0.07ヘテロ接合トンネルFETの性能ベンチマーキング【Powered by NICT】
Performance benchmarking of p-type In0.65Ga0.35As/GaAs0.4Sb0.6 and Ge/Ge0.93Sn0.07 hetero-junction tunnel FETs
著者 (18件):
Pandey R.
(The Pennsylvania State University, University Park, PA-16802, USA)
,
Schulte-Braucks C.
(Peter Gruenberg Institute (PGI-9) and JARA-FIT, Forschungszentrum Juelich GmbH, 52425 Juelich, Germany)
,
Sajjad R. N.
(Massachusetts Institute of Technology, Cambridge, MA-02139)
,
Barth M.
(The Pennsylvania State University, University Park, PA-16802, USA)
,
Ghosh R. K.
(University of Notre Dame, Notre Dame, IN, 46556, USA)
,
Grisafe B.
(University of Notre Dame, Notre Dame, IN, 46556, USA)
,
Sharma P.
(University of Notre Dame, Notre Dame, IN, 46556, USA)
,
von den Driesch N.
(Peter Gruenberg Institute (PGI-9) and JARA-FIT, Forschungszentrum Juelich GmbH, 52425 Juelich, Germany)
,
Vohra A.
(IMEC, Kapeldreef 75, Leuven B-3001, Belgium)
,
Rayner B.
(Kurt J. Lesker Company, Pittsburgh, PA, USA)
,
Loo R.
(IMEC, Kapeldreef 75, Leuven B-3001, Belgium)
,
Mantl S.
(Peter Gruenberg Institute (PGI-9) and JARA-FIT, Forschungszentrum Juelich GmbH, 52425 Juelich, Germany)
,
Buca D.
(Peter Gruenberg Institute (PGI-9) and JARA-FIT, Forschungszentrum Juelich GmbH, 52425 Juelich, Germany)
,
Yeh C-C.
(Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan)
,
Wu C-H.
(Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan)
,
Tsai W.
(Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan)
,
Antoniadis D.
(Massachusetts Institute of Technology, Cambridge, MA-02139)
,
Datta S.
(University of Notre Dame, Notre Dame, IN, 46556, USA)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2016
号:
IEDM
ページ:
19.6.1-19.6.4
発行年:
2016年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)