文献
J-GLOBAL ID:201702283105624486
整理番号:17A0362536
RF MEMS容量性スイッチに使用されるダイヤモンド膜における誘電体帯電現象:膜厚の影響【Powered by NICT】
Dielectric charging phenomena in diamond films used in RF MEMS capacitive switches: The effect of film thickness
著者 (7件):
Koutsoureli M.
(Physics Department, University of Athens, 15784 Panepistimioupolis, Athens, Greece)
,
Zevgolatis A.
(Physics Department, University of Athens, 15784 Panepistimioupolis, Athens, Greece)
,
Saada S.
(CEA, LIST, Diamond Sensors Lab., F-91191 Gif-sur-Yvette, France)
,
Mer-Calfati C.
(CEA, LIST, Diamond Sensors Lab., F-91191 Gif-sur-Yvette, France)
,
Michalas L.
(Physics Department, University of Athens, 15784 Panepistimioupolis, Athens, Greece)
,
Papaioannou G.
(Physics Department, University of Athens, 15784 Panepistimioupolis, Athens, Greece)
,
Bergonzo P.
(CEA, LIST, Diamond Sensors Lab., F-91191 Gif-sur-Yvette, France)
資料名:
Microelectronics Reliability
(Microelectronics Reliability)
巻:
64
ページ:
660-664
発行年:
2016年
JST資料番号:
C0530A
ISSN:
0026-2714
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)