文献
J-GLOBAL ID:201702263591905598
整理番号:17A0057930
異なる構造を持つ高出力GaN系白色LEDの劣化挙動と信頼性【Powered by NICT】
Degradation behaviors and reliability of high power GaN-based white LEDs with different structures
著者 (7件):
Cao Haicheng
(Semiconductor lighting Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, A35, Qinghua East Road, Haidian District, Beijing, P. R. China)
,
Fu Jiajia
(Semiconductor lighting Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, A35, Qinghua East Road, Haidian District, Beijing, P. R. China)
,
Zhao Lixia
(Semiconductor lighting Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, A35, Qinghua East Road, Haidian District, Beijing, P. R. China)
,
Sun Xuejiao
(Semiconductor lighting Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, A35, Qinghua East Road, Haidian District, Beijing, P. R. China)
,
Sun Baojuan
(Semiconductor lighting Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, A35, Qinghua East Road, Haidian District, Beijing, P. R. China)
,
Wang Junxi
(Semiconductor lighting Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, A35, Qinghua East Road, Haidian District, Beijing, P. R. China)
,
Li Jinmin
(Semiconductor lighting Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, A35, Qinghua East Road, Haidian District, Beijing, P. R. China)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2016
号:
SSLChina
ページ:
74-79
発行年:
2016年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)