Rchr
J-GLOBAL ID：200901002333954762
Update date: May. 17, 2020
Oheda Hidetoshi
オオエダ ヒデトシ | Oheda Hidetoshi
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Affiliation and department：
National Institute of Advanced Industrial Science and Technology Tsukuba Central 2
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Job title：
Senior Researcher
Homepage URL (1)：
http://www.aist.go.jp/RESEARCHERDB/cgi-bin/worker_detail.cgi?call=namae&rw_id=H60469125
Research theme for competitive and other funds (1)：
アモルファス半導体の構造不安定性と光電特性に関する研究
MISC (10)：
Hidetoshi Oheda. Two characteristic photoluminescence states in a-Si : H and its alloys. JOURNAL OF NON-CRYSTALLINE SOLIDS. 2006. 352. 9-20. 1144-1147
H Oheda. Photoinduced structural instability in a hydrogenated amorphous silicon-germanium alloy with high structural inhomogeneity. PHYSICAL REVIEW B. 2005. 71. 15. 155202-1155202-1-155202-5
H Oheda. Structural instability depending on a structural configuration at the surroundings of the Si : H bond in a-Si : H. PHYSICS OF SEMICONDUCTORS, PTS A AND B. 2005. 772. 85-86
H Oheda. Site-dependent structural instability at the surroundings of the Si-H bond in hydrogenated amorphous silicon based wide-gap alloys. PHYSICAL REVIEW B. 2004. 69. 24. 2452031-2452036
H Oheda. Photoinduced structural instability around the Si-H bond in undoped a-Si : H and related wide-gap alloys. JOURNAL OF NON-CRYSTALLINE SOLIDS. 2004. 338. 361-364
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