Rchr

J-GLOBAL ID：200901002706007475 Update date: Apr. 17, 2024

Suzuki Toshimasa

スズキトシマサ | Suzuki Toshimasa

Affiliation and department：
Homepage URL (1)： http://leo.nit.ac.jp/~tsuzuki/index.htm

Research field (3)： Electric/electronic material engineering , Crystal engineering , Applied materials

Research keywords (8)：光デバイス , 電子デバイス , エピタキシャル成長 , 窒化物半導体 , Opto-Devices , Electronic Devices , Epitaxial Growth , Nitride Semiconductors

Research theme for competitive and other funds (5)：

ワイドバンドギャップ半導体のデバイス応用に関する研究
半導体超格子の成長と評価に関する研究
Research on Device Application of Wide-Bandgap Semiconductors.
Study on Device Application of Wide-Bandgap Semiconductors
Study on Growth and Characterization of Semiconductor Superlattices.

MISC (24)：

ｍore...

Books (1)：

Observation of the Early Stages and 3D-2D Transition of MOCUD Grown GaN with LT-GaN Buffer Layer.
Proc. Int. Workshop on Nitride Semiconductors IPAP Conf. Series 1 2001

Education (4)：

- 1979 Tokyo Institute of Technology Interdisciplinary Science and Engineering
- 1979 Tokyo Institute of Technology Graduate School, Division of Integrated Science and Engineering Electrochemistry Major
- 1973 Tokyo Institute of Technology School of Engineering
- 1973 Tokyo Institute of Technology Faculty of Engineering Department of Electrochemistry

Professional career (2)：

(BLANK) (Tokyo Institute of Technology)
(BLANK) (Tokyo Institute of Technology)

Work history (3)：

1993 - 2002 Nippon Institute of Technology Faculty of Engineering
1993 - 2002 Professor, Faculty of Engineering,
Nippon Institute of Technology.

Association Membership(s) (5)：

Materials Research Society , アメリカ真空学会(American Vacuum Society) , 日本表面科学会 , 日本結晶成長学会 , 応用物理学会

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