Rchr
J-GLOBAL ID：200901003304666568
Update date: Aug. 30, 2020
Zhou Yikai
ゾウ イカイ | Zhou Yikai
Affiliation and department：
Osaka University The Institute of Scientific and Industrial Research
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Detailed information
Job title：
Others
Research theme for competitive and other funds (2)：
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MISC (107)：
H. Tambo, S. Hasegawa, H. Kameoka, Y. K. Zhou, S. Emura, H. Asahi. Low-temperature molecular beam epitaxy growth and properties of GaGdN nanorods. JOURNAL OF CRYSTAL GROWTH. 2011. 323. 1. 323-325
H. Tambo, S. Hasegawa, H. Kameoka, Y. K. Zhou, S. Emura, H. Asahi. Low-temperature molecular beam epitaxy growth and properties of GaGdN nanorods. JOURNAL OF CRYSTAL GROWTH. 2011. 323. 1. 323-325
A. Yabuuchi, M. Maekawa, A. Kawasuso, S. Hasegawa, Y. K. Zhou, H. Asahi. Defect structure of MBE-grown GaCrN diluted magnetic semiconductor films. 12TH INTERNATIONAL WORKSHOP ON SLOW POSITRON BEAM TECHNIQUES (SLOPOS12). 2011. 262
H. Tambo, S. Hasegawa, K. Higashi, R. Kakimi, S. N. M. Tawil, Y. K. Zhou, S. Emura, H. Asahi. Structural and magnetic properties of diluted magnetic semiconductor GaGdN nanorods. PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 2. 2011. 8. 2
Carrier-mediated ferromagnetism in InGaGdN grown by plasma-assisted molecular beam epitaxy. Proceedings of the 23rd International Conference on Indium Phosphide and Related Material. 2011. pp.252-255
ｍore...
Works (12)：
スピン依存弾道電子マッピング法の開発と半導体へのスピン注入機構の解明
2009 -
室温強磁性窒化物物半導体ナノ構造とナノスピントロニクスデバイス応用に関する研究
2009 -
InGaNベース強磁性半導体による長波長円偏光半導体レーザ創製に関する研究
2009 -
希土類元素添加の精密制御による物性・機能性の開拓
2009 -
室温強磁性窒化物物半導体ナノ構造とナノスピントロニクスデバイス応用に関する研究
2008 -
ｍore...
Awards (2)：
2006 - Best Paper Award
2006 - Best Paper Award
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