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J-GLOBAL ID：200901003946598060 Update date: Jan. 24, 2024

Tsuchiya Toshiaki

ツチヤトシアキ | Tsuchiya Toshiaki

Affiliation and department：
Job title： Visiting Professor
Other affiliations (1)：

島根大学名誉教授

Research field (1)： Electronic devices and equipment

Research keywords (2)：電子デバイス工学 , Electron Devices

Research theme for competitive and other funds (6)：

2014 - 2016 単一トラップの分離検出・電子物性評価技術の開発とトラップ物理の新展開
2010 - 2012 ナノCMOSデバイスの界面物性揺らぎ評価技術の開発とRTNの機構解明に関する研究
2006 - 2009 ナノスケールデバイスにおける界面物性揺らぎと雑音に関する研究
Study on High Performance and High Hot-Carrier-Immunity TFTs
Study on Device Physics and Modeling of Ultra-Thin-Film CMOS/SOI Devices

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Papers (27)：

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MISC (100)：

Detection and Analysis of Single MOS Interface Traps Using the Charge Pumping Method : Toward Advanced Atomistic Trap Physics. 2016. 116. 296. 43-47
Detection and characterization of single MOS interface traps by the charge pumping method. 2016. 85. 5. 422-426
Tokinobu Watanabe, Masahiro Hori, Taiki Saruwatari, Toshiaki Tsuchiya, Yukinori Ono. Evaluation of Accuracy of Charge Pumping Current in Time Domain. IEICE TRANSACTIONS ON ELECTRONICS. 2015. E98C. 5. 390-394
WATANABE Tokinobu, HORI Masahiro, TSUCHIYA Toshiaki, ONO Yukinori. Accuracy of Time Domain Charge Pumping. Technical report of IEICE. SDM. 2015. 114. 443. 13-16
Masahiro Hori, Tokinobu Watanabe, Toshiaki Tsuchiya, Yukinori Ono. Direct observation of electron emission and recombination processes by time domain measurements of charge pumping current. APPLIED PHYSICS LETTERS. 2015. 106. 4. 041603_1-4

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Patents (4)：

MOS thin film transistor and method of fabricating the same
Mothod of fabricating semiconductor device with protective film
Semiconductor device and method of fabricating the same
Semiconductor memory device

Books (7)：

Noise in Nanoscale Semiconductor Devices
Springer Nature 2020
Siデバイス・プロセス技術の開発史 : 極限追及と実用化 = Development of silicon device and process technologies : History of challenge to Ultimate structures and applications to communication networks
日本電信電話先端集積デバイス研究所,サイバー出版センター 2017 ISBN:9784908520129
Fully-Depleted SOI CMOS Circuits and Technology for Ultralow-Power Applications
Springer 2006 ISBN:0387292179
SOI CMOSデバイスの基礎と応用
(株)リアライズ社 1999
Principles and Applications of SOI CMOS Devices
REALIZE INC. 1999

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Lectures and oral presentations (125)：

微細MOSデバイスとの対話を通じた過去と将来
(IEEE広島支部功績賞特別講演会 2016)
電子捕獲放出過程における界面トラップ間の相互作用
(第63回応用物理学会春季学術講演会 2016)
ホットキャリアストレス誘起のRTNと発生した酸化膜トラップの評価
(第63回応用物理学会春季学術講演会 2016)
界面トラップ数の真の値とばらつき,および従来のチャージポンピング理論による値との比較
(第63回応用物理学会春季学術講演会 2016)
Characterization of Individual Si/SiO2 Interface Traps: Direct Observation of Single Pb0 Centers by the Charge Pumping (CP) Method and Correction of the Conventional CP Theory
(The 228th Electrochemical Society Meeting, the Symp. on ULSI Process Integration 9 2015)

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Works (11)：

Study on reliability of submicron-TFTs
2005 -
Study on high-performance thin-film transistors
2003 - 2004
Study on TFT characteristics degradation
2003 - 2004
Study on 3-D nano SOI-MOS-devices
2004 -
Analysis of MOS transistors influenced by MEMS process
2004 -

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Professional career (1)：

Dr. Engineering (Waseda University)

Work history (4)：

2017/04 - 現在 Shizuoka University Institute of Electronics Specially Appointed Professor
1998/04 - 2017/03 Shimane University Professor
1976/04 - 1998/03 NTT電気通信研究所
1983/11 - 1984/10 Cornell University Visiting Fellow

Committee career (12)：

2016 - 2016 応用物理学会中国四国支部貢献賞選考委員会
2001 - 2016 応用物理学会中国四国支部支部役員
2011 - 2014 応用物理学会諮問委員(旧評議員)
2010 - 2011 応用物理学会理事
2008/04 - 2010/03 島根大学教育研究評議会評議員

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Awards (4)：

2016/09 - JSAP JSAP Paper Award
2014/01 - STARC STARC Award
2012/09 - JSAP JSAP Fellow
2002/01 - IEEE IEEE FELLOW

Association Membership(s) (3)：

JSAP , The Japan Society of Applied Physics. , IEEE.

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