Rchr
J-GLOBAL ID：200901004458069330
Update date: Sep. 01, 2020
Gozu Shinichirou
ゴズ シンイチロウ | Gozu Shinichirou
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Affiliation and department：
National Institute of Advanced Industrial Science and Technology
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Homepage URL (1)：
http://www.aist.go.jp/RESEARCHERDB/cgi-bin/worker_detail.cgi?call=namae&rw_id=S29507196
Research theme for competitive and other funds (1)：
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Papers (10)：
Shin-ichiro Gozu, Teruo Mozume. Highly strained InAlP/InGaAs-based coupled double quantum wells on InP substrates. Japanese Journal of Applied Physics. 2018. 57. 5
J. V. Gonzalez-Fernandez, R. Herrera-Jasso, N. A. Ulloa-Castillo, J. Ortega-Gallegos, R. Castro-Garcia, L. F. Lastras-Martinez, A. Lastras-Martinez, R. E. Balderas-Navarro, T. Mozume, S. Gozu. Residual electric fields of InGaAs/AlAs/AlAsSb (001) coupled double quantum wells structures assessed by photoreflectance anisotropy. INTERNATIONAL JOURNAL OF MODERN PHYSICS B. 2016. 30. 1
Tomoki Ishikawa, Shin-ichiro Gozu, Teruo Mozume, Masaki Asakawa, Shunsuke Ohki, Atsushi Tackeuchi. Picoseconds carrier spin relaxation in In0.8Ga0.2As/Al0.5Ga0.5As/AlAs0.56Sb0.44 coupled double quantum wells. 2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS). 2016
Shin-ichiro Gozu, Teruo Mozume. Crystal quality of InGaAs/AlAs/InAlAs coupled double quantum wells for intersubband transition devices. JOURNAL OF CRYSTAL GROWTH. 2015. 425. 102-105
Jijun Feng, Ryoichi Akimoto, Shin-ichiro Gozu, Teruo Mozume. All-optical XOR logic gate using intersubband transition in III-V quantum well materials. OPTICS EXPRESS. 2014. 22. 11. 12861-12868
ｍore...
Professional career (1)：
博士(材料科学)
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