Rchr
J-GLOBAL ID：200901007450897526
Update date: Aug. 28, 2020
Sakata Isao
サカタ イサオ | Sakata Isao
Affiliation and department：
National Institute of Advanced Industrial Science and Technology Tsukuba Central 2
About National Institute of Advanced Industrial Science and Technology Tsukuba Central 2
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Job title：
Senior Researcher
Homepage URL (1)：
http://www.aist.go.jp/RESEARCHERDB/cgi-bin/worker_detail.cgi?call=namae&rw_id=I60310287
Research field (3)：
Electronic devices and equipment
, Crystal engineering
, Applied materials
Research keywords (6)：
電子物性工学 固体電子工学 半導体エレクトロニクス 太陽電池
, Amorphous semiconductorsm
, Defects in semiconductors
, Silicon nanoelectronics
, Silicon MOS devices
, Solar cells
Research theme for competitive and other funds (1)：
1.電子材料物性 2.半導体デバイス 3.太陽電池
MISC (23)：
Sakata, I, M Yamanaka, R Shimokawa. Back-surface-field effects at the heterojunctions between boron-doped p-type hydrogenated amorphous silicon and crystalline silicon in thin-film crystalline silicon solar cells. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS. 2005. 44. 10. 7332-7339
Sakata, I, M Yamanaka. Energy distribution of gap states in hydrogenated amorphous silicon by post-transit photocurrent spectroscopy: Validity of an indium-tin oxide/silicon oxide double-layer gate. JOURNAL OF APPLIED PHYSICS. 2005. 97. 10. 103707-1-103707-6
S Hazra, Sakata, I, M Yamanaka, E Suzuki. Control on the formation of Si nanodots fabricated by thermal annealing/oxidation of hydrogenated amorphous silicon. JOURNAL OF APPLIED PHYSICS. 2004. 96. 12. 7532-7536
Sakata, I, M Yamanaka, R Shimokawa. Band lineup at the interface between boron-doped P-type hydrogenated amorphous silicon and crystalline silicon studied by internal photoemission. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS. 2004. 43. 7B. L954-L956
S Hazra, Sakata, I, M Yamanaka, E Suzuki. Evolution of an amorphous silicon network from silicon paracrystallites studied by spectroscopic ellipsometry. PHYSICAL REVIEW B. 2004. 69. 23. 235204-1-235204-5
ｍore...
Professional career (1)：
Dr.Engineering
Association Membership(s) (5)：
電子情報通信学会
, 応用物理学会
, The Japan Society of Applied Physics
, Information and Communication Engineers
, The Institute of Electronics
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