Masatoshi Koyama

コヤママサトシ | Masatoshi Koyama

Homepage URL (1)： http://www.oit.ac.jp/www-ee/server/semicon/

Research field (4)： Electronic devices and equipment , Electric/electronic material engineering , Magnetism, superconductivity, and strongly correlated systems , Semiconductors, optical and atomic physics

Research keywords (2)：半導体物性 , 半導体ナノ構造

Research theme for competitive and other funds (1)：

2005 - 半導体ナノ構造デバイスに関する研究

MISC (3)：

M. Koyama, T. Inoue, N. Amano, T. Maemoto, S. Sasa, M. Inoue. Nonlinear Electron Tansport Properties in InAs/AlGaSb Three-Terminal Ballistic Junctions. J. of Physics: Conf. Ser. 2008. 109. 012023
M. Koyama, T. Inoue, N. Amano, T. Maemoto, S. Sasa, M. Inoue. Nonlinear electron transport properties and rectification effects in InAs/AlGaSb ballistic devices. PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 1. 2008. 5. 1. 107-110
M. Koyama, H. Takahashi, T. Maemoto, S. Sasa, M. Inoue. Ballistic rectification effects in InAs/AlGaSb nanostructures. AIP conference proceeding. 2007. 893. 577

Work history (1)：

Osaka Institute of Technology Nanomaterials Microdevices Research Center

Association Membership(s) (3)：

IEEE , America Physics Society , 応用物理学会

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