Rchr

J-GLOBAL ID：200901009242649465 Update date: May. 16, 2020

Umezawa Hitoshi

ウメザワヒトシ | Umezawa Hitoshi

Affiliation and department：
Homepage URL (1)： http://www.aist.go.jp/RESEARCHERDB/cgi-bin/worker_detail.cgi?call=namae&rw_id=H96152866

Research field (1)： Electronic devices and equipment

Research keywords (1)：ダイヤモンド電子デバイス高出力/高周波デバイス高温デバイス

MISC (6)：

K Hirama, S Miyamoto, H Matsudaira, K Yamada, H Kawarada, T Chikyo, H Koinuma, K Hasegawa, H Umezawa. Characterization of diamond metal-insulator-semiconductor field-effect transistors with aluminum oxide gate insulator. APPLIED PHYSICS LETTERS. 2006. 88. 11. 112117-
Modeling of Reverse Leakage Current of Diamond Schottky Barrier Diode. DIAMOND AND RELATED MATERIALS. 2006. 45. 7. 5681-5684
H Umezawa, K Hirama, T Arai, H Hata, H Takayanagi, T Koshiba, K Yohara, S Mejima, M Satoh, KS Song, et al. RF diamond transistors: Current status and future prospects. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS. 2005. 44. 11. 7789-7794
Y Takano, M Nagao, T Takenouchi, H Umezawa, Sakaguchi, I, M Tachiki, H Kawarada. Superconductivity in polycrystalline diamond thin films. DIAMOND AND RELATED MATERIALS. 2005. 14. 11-12. 1936-1938
T Saito, KH Park, K Hirama, U Umezawa, M Satoh, H Kawarada, H Okushi. Fabrication of diamond MISFET with micron-sized gate length on boron-doped (111) surface. DIAMOND AND RELATED MATERIALS. 2005. 14. 11-12. 2043-2046

ｍore...

Association Membership(s) (2)：

Materials Research Society , 応用物理学会

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