Rchr
J-GLOBAL ID：200901009546686987   Update date: Sep. 07, 2022

Nakayama Hiroshi

ナカヤマ ヒロシ | Nakayama Hiroshi
Affiliation and department：
Osaka City University Graduate School of Engineering, Physical Electronics and Informatics Course

About Osaka City University Graduate School of Engineering, Physical Electronics and Informatics Course


Research field  (2)： Crystal engineering ,  Applied materials
Research keywords  (2)： Material Design of New Semiconductor Materials ,  Physics of Crystal-Growth Processes
Research theme for competitive and other funds  (6)：
  • シリコンおよびダイヤモンド系薄膜の超高真空CVD
  • シリコン中の遷移金属・希土類元素の不純物状態
  • GaNの分子線エピタキシーとスピンフォトニクス
  • UHV-CVD of Silicon and diamond-related thin films.
  • Transition-Metal and Rare-Earth Impurities in Silicon
Show all
MISC (64)：
ｍore...
Books (2)：
  • Atomic Ordering in Epitaxial Alloy Semiconductors: from the Discoveries to the Physical Understanding
    Advances in the Understanding of Crystal Growth Mechanism, Elsevier Science 1997
  • 金属便覧改訂5版(分担執筆) 第2章 2.6.4 薄膜
    日本金属学会編(丸善出版)
Education (4)：
  • - 1981 Osaka University
  • - 1981 Osaka University Graduate School, Division of Engineering Science
  • - 1976 Osaka University School of Engineering Science Direct Affiliates
  • - 1976 Osaka University Faculty of Engineering Science
Professional career (1)：
  • Doctor of Engineering (Osaka University)
Work history (4)：
  • 1990 - 2000 Kobe University Faculty of Engineering, Department of Electrical and Electronic Engineering
  • 1983 - 1990 Osaka University School of Engineering
  • 1982 - 1983 米国IBM サンノゼ研究所
  • 1982 - 1983 IBM San Jose Research Lab.
Committee career (4)：
  • 1993 - 1994 応用物理学会 編集委員
  • 1994 - 日本結晶成長学会 評議員
  • 1992 - 応用物理学会 応用電物性分科会幹事
  • 1992 - 応用物理学会 結晶工学分科会幹事
Association Membership(s) (2)：
日本結晶成長学会 ,  応用物理学会
※ Researcher’s information displayed in J-GLOBAL is based on the information registered in researchmap. For details, see here.

Return to Previous Page

TOP

BOTTOM