Research field (3)：
Electrical power engineering
, Electronic devices and equipment
, Electric/electronic material engineering
Research keywords (5)：
Power Electronics
, Silicon Carbide
, Power Semiconductor Devices
, LSI CMOS
, シリコン
Research theme for competitive and other funds (2)：
2007 - 2010 Novel delta doping technology with two or more dopants in silicon towards quantum information processing platform
シリコンLSI技術
Papers (71)：
Hiromu Shiomi, Hidenori Kitai, Masatoshi Tsujimura, Yuji Kiuchi, Daisuke Nakata, Shuichi Ono, Kazutoshi Kojima, Kenji Fukuda, Kunihiro Sakamoto, Kimiyohi Yamasaki, et al. Electrical and physical characterizations of the effects of oxynitridation and wet oxidation at the interface of SiO2/4H-SiC(0001) and (000(1)over-bar). JAPANESE JOURNAL OF APPLIED PHYSICS. 2016. 55. 4
Kazuhiko Endo, Yuki Ishikawa, Takashi Matsukawa, Yongxun Liu, Shin-ichi O'uchi, Kunihiro Sakamoto, Junichi Tsukada, Hiromi Yamauchi, Meishoku Masahara. Atomic Layer Deposition of SiO2 for the Performance Enhancement of Fin Field Effect Transistors. JAPANESE JOURNAL OF APPLIED PHYSICS. 2013. 52. 11
Yongxun Liu, Takahiro Kamei, Takashi Matsukawa, Kazuhiko Endo, Shinichi O'uchi, Junichi Tsukada, Hiromi Yamauchi, Yuki Ishikawa, Tetsuro Hayashida, Kunihiro Sakamoto, et al. Gate Structure Dependence of Variability in Polycrystalline Silicon Fin-Channel Flash Memories. JAPANESE JOURNAL OF APPLIED PHYSICS. 2013. 52. 6
O'UCHI Shin-ichi, ENDO Kazuhiko, MATSUKAWA Takashi, LIU Yongxun, NAKAGAWA Tadashi, ISHIKAWA Yuki, TSUKADA Junichi, YAMAUCHI Hiromi, SEKIGAWA Toshihiro, KOIKE Hanpei, et al. A 0.7-V Opamp in Scaled Low-Standby-Power FinFET Technology. 2012. 95. 4. 686-695
S. O'uchi, K. Endo, M. Maezawa, T. Nakagawa, H. Ota, Y. X. Liu, T. Matsukawa, Y. Ishikawa, J. Tsukada, H. Yamauchi, et al. Cryogenic Operation of Double-Gate FinFET and Demonstration of Analog Circuit at 4.2K. IEEE INTERNATIONAL SOI CONFERENCE. 2012
