Matsuura Hideharu

マツウラヒデハル | Matsuura Hideharu

Affiliation and department：
Job title： Professor
Homepage URL (1)： http://www.osakac.ac.jp/labs/matsuura/

Research field (2)： Electronic devices and equipment , Electric/electronic material engineering

Research keywords (6)： X線検出器 , ホール測定 , 半導体 , X-ray detector , Hall-ettect measurement , Semiconductor

Research theme for competitive and other funds (20)：

2023 - 2026 SiC-IGBTのコレクタ用高濃度Al添加4H-SiCの電気伝導機構の解明
2020 - 2023 超高濃度Al添加4H-SiCの抵抗率及びHall係数の温度依存性の物理モデル構築
2014 - 2017 Investigation of organic semiconductor/inorganic semiconductor heterojunctions and organic semiconductor heterojunctions
2010 - 2010 半絶縁性次世代半導体中の電気的に活性な欠陥評価方法の開発
2006 - 2007 Investigation of high energy X-ray detectors to detect a trace of pollutant capable of operating at room temperature

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Papers (115)：

Atsuki Hidaka, Yuki Kondo, Akinobu Takeshita, Hideharu Matsuura, Kazuma Eto, Shiyang Ji, Kazutoshi Kojima, Tomohisa KATO, Sadafumi Yoshida, Hajime Okumura. Comparison of temperature-dependent resistivity of heavily Al- and N-codoped 4H-SiC grown by physical vapor transport and heavily Al-doped 4H-SiC grown by chemical vapor deposition. Japanese Journal of Applied Physics. 2023. 62. 10. 101001-1-101001-6
Hideharu Matsuura, Atsuki Hidaka, Shiyang Ji, Kazuma Eto, Yuuki Ishida, Sadafumi Yoshida. Negative Hall coefficient in band conduction region in heavily Al-doped 4H-SiC. Journal of Applied Physics. 2023. 134. 11. 115701-1-10
Hideharu Matsuura, Akinobu Takeshita, Rinya Nishihata, Yuuki Kondo, Atsuki Hidaka. Electrical Properties of Heavily Al-Doped 4H-SiC. Materials Science Forum. 2023. 1093. 73-86
Hideharu Matsuura, Rinya Nishihata, Atsuki Hidaka. Sign and Activation Energy of Hall Coefficient for Hopping Conduction in Heavily Al-Doped 4H-Sic. Journal of Physics and Chemistry Research. 2022. 4. 1. 1-8
Hideharu Matsuura, Yuki Kondo, Kosuke Iida, Atsuki Hidaka, Shiyang Ji, Kazuma Eto, Kazutoshi Kojima, Tomohisa Kato, Sadafumi Yoshida, Hajime Okumura. Simple physical model for the sign of the Hall coefficient in variable-range hopping conduction in heavily Al-doped p-type 4H-SiC. JAPANESE JOURNAL OF APPLIED PHYSICS. 2021. 60. 3

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MISC (9)：

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Patents (11)：

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Books (8)：

Advances in Sensors: Reviews Vol. 6
International Frequency Sensor Association (IFSA) (http://www.sensorsportal.com/HTML/BOOKSTORE/Advances_in_Sensors_VI.pdf) 2018 ISBN:9788409030309
2段階方式で学ぶわかる電磁気学
ムイスリ出版 2015 ISBN:9784896412338
半導体SiC技術と応用
日刊工業新聞社 2011 ISBN:9784526067549
Advances in condensed matter and materials research Vol. 10
Nova Science Publishers 2010 ISBN:9781607419594
絵でわかる半導体工学の基礎
ムイスリ出版 2009 ISBN:9784896411560

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Lectures and oral presentations (181)：

Temperature-Dependent Hall Coefficient in Band Conduction Region for Heavily Al-Doped 4H-SiC
(International Conference on Silicon Carbide and Related Materials (ICSCRM2023) 2023)
Electrical Properties of Heavily Al-Doped 4H-SiC
(The 3rd Asia-Pacific Conference on Silicon Carbide and Related Materials(APCSCRM 2022) 2022)
Al濃度1020 cm-3台前半でのp型4H-SiC CVDエピ膜の結晶性と電気特性との関係
(第64回応用物理学会春季学術講演会, 青山学院大学相模原キャンパス 2022)
Al濃度1020 cm-3台前半でのp型4H-SiCエピ膜の電気抵抗率の温度依存性とAl濃度との関係
(第81回応用物理学会秋季学術講演会(オンライン) 2020)
Al濃度1020 cm-3台前半のp型4H-SiCエピ膜の電気抵抗率とHall係数
(第67回応用物理学会春季学術講演会、上智大学四谷キャンパス 2020)

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Works (8)：

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Education (2)：

Professional career (1)：

Work history (17)：

2022/04 - 現在 Osaka Electro-Communication University
2009/04 - 現在 Osaka Electro-Communication University Faculty of Engineering, Department of Electrical and Electronic Engineering Professor
2021/03 - 2024/03 学校法人大阪電気通信大学評議員会評議員
2018/04 - 2020/03 Osaka Electro-Communication University Library
2015/04 - 2017/03 学校法人大阪電気通信大学理事会理事

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Committee career (17)：

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Association Membership(s) (5)：

電気化学会 , IEEE , 日本真空協会 , 電子情報通信学会 , 応用物理学会

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