Rchr
J-GLOBAL ID：200901016503320772   Update date: Aug. 04, 2022

Nishi Kenji

ニシ ケンジ | Nishi Kenji
Research field  (4)： Electronic devices and equipment ,  Computational science ,  Crystal engineering ,  Applied materials
Research keywords  (6)： 集積回路 ,  シミュレーション ,  半導体 ,  LSI ,  simulation ,  Semiconductor
Research theme for competitive and other funds  (4)：
  • 2003 - 2005 Semiconductor simulation
  • 2003 - 2004 半導体シミュレーション
  • 半導体シミュレーション応用技術の研究
  • Application of semiconductor simulation
MISC (4)：
Patents (2)：
  • Pattern form of an active region of MOS type semiconductor
  • Pattern form of an active region of MOS type semiconductor
Works (1)：
  • 半導体のシミュレーション技術の研究
    2004 - 2005
Education (4)：
  • - 1984 Massachusetts Institute of Technology
  • - 1984 Massachusetts Institute of Technology Center for Advanced Engineering Study Electrical Engineering
  • - 1973 The University of Tokyo The Faculty of Engineering
  • - 1973 The University of Tokyo Faculty of Engineering Applied Physics
Professional career (1)：
  • Ph.D (The University of Tokyo)
Work history (2)：
  • 1980 - 2003 沖電気
  • 1980 - 2003 Oki Electric Industry
Committee career (2)：
  • 2001 - IEEE EDS AdCOM member
  • 2001 - IEEE EDS AdCOM member
Awards (2)：
  • 2001 - IEEE Fellow賞
  • 2001 - IEEE, Institute of Electrical and Electronics Engineers Fellow
Association Membership(s) (5)：
計算工学会 ,  電子情報通信学会 ,  応用物理学会 ,  IEEE ,  IEEE
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