Rchr
J-GLOBAL ID:200901016700332472   Update date: Jun. 05, 2007

MANIRUZZAMAN MD

MD マニルシャン | MANIRUZZAMAN MD
Affiliation and department:
Job title: Semiconductor Materials Processings For Si-ULSI Device Interconnections or Metallization Technology
Homepage URL  (1): http://www.geocities.com/mdm_zaman/home.html
Research field  (2): Electric/electronic material engineering ,  Thin-film surfaces and interfaces
Research keywords  (3): Thin Film ,  Diffusion Barrier ,  Copper Metallization
Research theme for competitive and other funds  (2):
  • 2001 - 2006 Formation of Cu[111] layer on Nb-based diffusion barrier on field oxide layer of SiO2.
  • -
Education (3):
  • - 2006 Kitami Institute of Technology Graduate School, Division of Materials Science Semiconductor Materials Processings (Barrier Layer Technology for Si-ULSI Metallization Technology)
  • - 2003 Kitami Institute of Technology Graduate School, Division of Engineering Electronic/Semiconductor physics(Barrier Layer Technology for Si-ULSI Metallization Technology)
  • - 1997 Bangladesh University of Engineering and Technology Electrical and Electronics Engineering Electrical and Electronics Engineering
Professional career (1):
  • Masters (Kitami Institute of Technology)
Work history (1):
  • 1997 - -till now, Lecturer, Electronics and Communication Engineering Discipline, Khulna University, Bangladesh
Committee career (1):
  • 2003 - 2004 The Institute of Electronics, Information and Communication Engineers Student Member
Association Membership(s) (2):
Information and Communication Engineers ,  The Institute of Electronics
※ Researcher’s information displayed in J-GLOBAL is based on the information registered in researchmap. For details, see here.

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