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J-GLOBAL ID：200901020415152700   Update date: Feb. 01, 2024

Nagashio Kosuke

ナガシオ コウスケ | Nagashio Kosuke
Affiliation and department：
東京大学 大学院工学系研究科 マテリアル工学専攻

About 東京大学 大学院工学系研究科 マテリアル工学専攻


Job title： 教授
Homepage URL  (2)： http://webpark1753.sakura.ne.jp/nagashio_lab/ ,  http://webpark1753.sakura.ne.jp/nagashio_lab_E/
Research field  (5)： Electric/electronic material engineering ,  Metals and resources production ,  Inorganic materials ,  Nano/micro-systems ,  Nanomaterials
Research keywords  (6)： 電子輸送特性 ,  ナノカーボン ,  凝固・結晶成長 ,  layered materials ,  crystal growth ,  2D devices
Research theme for competitive and other funds  (26)：
  • 2022 - 2027 Integration of 2 dimensional tunnel FET for ultra-low power consumption system
  • 2021 - 2026 Development of Electronic, Photonic, and Energy Applications with 2.5 Dimensional Structures
  • 2021 - 2026 General Management of Innovative Area of 2.5 Dimensional Materials Science
  • 2022 - 2025 Proposal of integratable two dimensional tunnel FET structure and demonstration of its ultra-low power operation
  • 2019 - 2022 2Dヘテロ界面特性の理解に基づく2DトンネルFETの構築
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Papers (204)：
  • Yih-Ren Chang, Ryo Nanae, Satsuki Kitamura, Tomonori Nishimura, Haonan Wang, Yubei Xiang, Keisuke Shinokita, Kazunari Matsuda, Takashi Taniguchi, Kenji Watanabe, et al. Shift Current Photovoltaics based on A Noncentrosymmetric Phase in in-plane Ferroelectric SnS. Advanced Materials. 2023
  • Hiroto Ogura, Seiya Kawasaki, Zheng Liu, Takahiko Endo, Mina Maruyama, Yanlin Gao, Yusuke Nakanishi, Hong En Lim, Kazuhiro Yanagi, Toshifumi Irisawa, et al. Multilayer In-Plane Heterostructures Based on Transition Metal Dichalcogenides for Advanced Electronics. ACS Nano. 2023
  • Wataru Nishiyama, Tomonori Nishimura, Masao Nishioka, Keiji Ueno, Satoshi Iwamoto, Kosuke Nagashio. Is the Bandgap of Bulk PdSe 2 Located Truly in the Far-Infrared Region? Determination by Fourier-Transform Photocurrent Spectroscopy. Advanced Photonics Research. 2022. 3. 11. 2200231-2200231
  • Nan Fang, Daiki Yamashita, Shun Fujii, Keigo Otsuka, Takashi Taniguchi, Kenji Watanabe, Kosuke Nagashio, Yuichiro K. Kato. Quantization of Mode Shifts in Nanocavities Integrated with Atomically Thin Sheets. Advanced Optical Materials. 2022
  • Hiroki Ago, Susumu Okada, Yasumitsu Miyata, Kazunari Matsuda, Mikito Koshino, Kosei Ueno, Kosuke Nagashio. Science of 2.5 dimensional materials: paradigm shift of materials science toward future social innovation. Science and Technology of Advanced Materials. 2022
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MISC (83)：
  • 米盛樹生, DUTTA Sudipta, 長汐晃輔, 若林克法. Theoretical Study on Raman Active Modes of SnS Thin Films. 応用物理学会秋季学術講演会講演予稿集(CD-ROM). 2020. 81st
  • 永村直佳, 永村直佳, 吹留博一, 長汐晃輔, 尾嶋正治. Interface dipole layer observation in graphene field effect transistors by synchrotron soft X-ray operando spectromicroscopy. 応用物理学会秋季学術講演会講演予稿集(CD-ROM). 2020. 81st
  • NAGASHIO Kosuke. Control of the interface properties in a 2D layered heterostructure FET. Oyo Buturi. 2020. 89. 3. 139-146
  • 川元颯巳, 東垂水直樹, 中村優, 若林克法, 長汐晃輔. 出発材料比較による高品質SnS薄膜の作製. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2019. 66th
  • NAGASHIO Kosuke. Gate stack formation for 2D layered electronics. Abstract of annual meeting of the Surface Science of Japan. 2017. 37. 0. 54-54
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Books (2)：
  • グラフェンから広がる二次元物質の新技術と応用 : 世界の動向、CVD合成、転写積層、量子物性、センサ・デバイス、THz応用
    エヌ・ティー・エス 2020 ISBN:9784860436636
  • グラフェンから広がる二次元物質の新技術と応用 : 世界の動向、CVD合成、転写積層、量子物性、センサ・デバイス、THz応用
    エヌ・ティー・エス 2020 ISBN:9784860436636
Lectures and oral presentations  (109)：
  • “Understanding interface properties in 2D heterostructure FETs”,
    (MRS spring meeting 2020, (April, 13-17, Phenix, AZ, USA). 2020)
  • “Room temperature ferroelectricity in monolayer SnS”,
    (“Room temperature ferroelectricity in monolayer SnS”, 4th International Workshop on 2D Materials 2020, (Feb., 26-28, Yonsei University, Seoul, Korea). 2020)
  • ”Photoresponse in h-BN encapsulated bilayer graphene field-effect phototransistor”
    (Materials Research Meeting 2019 2019)
  • ”Direct observation of electron capture & emission processes by the time domain charge pumping measurement of MoS2 FET”
    (Materials Research Meeting 2019 2019)
  • Ferroelectricity in monolayer SnS
    (JSPS/EPSRC C2C meeting 2019)
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Education (3)：
  • 1999 - 2002 The University of Tokyo The Graduate School of Engineering Department of Materials Engineering
  • 1997 - 1999 The University of Tokyo The Graduate School of Engineering Department of Materials Engineering
  • 1993 - 1997 Kyoto University Faculty of Engineering
Professional career (1)：
  • Ph.D (The University of Tokyo)
Work history (6)：
  • 2020/06 - 現在 Professor, Department of Materials Engineering, The University of Tokyo
  • 2011/04 - 2020/05 Associate Professor, Department of Materials Engineering, The University of Tokyo
  • 2007/09 - 2011/03 Lecturer, Department of Materials Engineering, The University of Tokyo
  • 2003/10 - 2007/08 Japan Aerospace Exploration Agency Research Associate
  • 2002/04 - 2003/09 Postdoctoral Fellow for Research Abroad of JSPS, Stanford university
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Association Membership(s) (5)：
フラーレンナノチューブグラフェン学会 ,  IERR EDS ,  Materials Research Society ,  応用物理学会 ,  日本金属学会
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