Rchr
J-GLOBAL ID：200901021913492264
Update date: Apr. 29, 2020
Nishisaka Mika
ニシサカ ミカ | Nishisaka Mika
Affiliation and department：
旧所属 九州工業大学 マイクロ化総合技術センター
About 旧所属 九州工業大学 マイクロ化総合技術センター
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Job title：
助手
Research field (2)：
Nano/micro-systems
, Nanomaterials
Research keywords (2)：
Schottky contact
, SOI
Research theme for competitive and other funds (2)：
ショットキー接触を用いた半導体デバイスに関する研究
Study of Semiconductor Device by Using Schottky contacts.
MISC (3)：
M Nishisaka, Y Hamasaki, O Shirata, T Asano. Cross-hatch related oxidation and its impact on performance of strained-Si MOSFETs. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS. 2004. 43. 4B. 1886-1890
M Nishisaka, S Matsumoto, T Asano. Schottky source/drain SOI MOSFET with shallow doped extension. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS. 2003. 42. 4B. 2009-2013
Reduction of the Floating Body Effect in SOI MOSFETs by Using Schottky Source/Drain Contacts. Japanese Journal of Applied Physics. 1998. 37. 3B. 1295-1299
Education (4)：
- 1998 Kyushu Institute of Technology
- 1998 Kyushu Institute of Technology Graduate School, Division of Information Engineering
- 1996 Kyushu Institute of Technology School of Computer Science and Systems Engineering
- 1996 Kyushu Institute of Technology Faculty of Computer Science and Systems Engineering
Work history (5)：
2001 - - 九州工業大学 マイクロ化総合技術センター
2001 - - Center of Microelectronic Systems,
1998 - 2000 NTT通信エネルギー研究所
1998 - 2000 NTT Telecommunications Energy Labs.
Kyushu Inst. of Tech.
Association Membership(s) (4)：
IEEE
, 応用物理学会
, The Japan Society of Applied Physics
, IEEE
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