Rchr
J-GLOBAL ID:200901023670935726
Update date: Sep. 02, 2022
Onuma Takeyoshi
オヌマ タケヨシ | Onuma Takeyoshi
Affiliation and department:
Japan Science and Technology Agency
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Homepage URL (1):
http://bukko.bk.tsukuba.ac.jp/~optoelec/index.html
Research field (4):
Optical engineering and photonics
, Thin-film surfaces and interfaces
, Crystal engineering
, Applied materials
Research keywords (6):
エピタキシャル成長
, 結晶評価
, 窒化物半導体
, Epitaxial growth
, Crystal characterization
, Nitride semiconductor
Research theme for competitive and other funds (5):
2001 - 2006 窒化物半導体の発光ダイナミクスの解明
2001 - ガスソース分子線エピタキシ法を用いた窒化物半導体の成長
2001 - III族窒化物半導体の光学評価
2001 - Growth of nitride semiconductor using gas source molecular beam epitaxy
2001 - Optical characterization of group III-nitride semiconductor.
MISC (35):
T Onuma, SF Chichibu, A Uedono, T Sota, P Cantu, TM Katona, JF Keading, S Keller, UK Mishra, S Nakamura, et al. Radiative and nonradiative processes in strain-free AlxGa1-xN films studied by time-resolved photoluminescence and positron annihilation techniques. JOURNAL OF APPLIED PHYSICS. 2004. 95. 5. 2495-2504
T Onuma, SF Chichibu, A Uedono, T Sota, P Cantu, TM Katona, JF Keading, S Keller, UK Mishra, S Nakamura, et al. Radiative and nonradiative processes in strain-free AlxGa1-xN films studied by time-resolved photoluminescence and positron annihilation techniques. JOURNAL OF APPLIED PHYSICS. 2004. 95. 5. 2495-2504
M Sugiyama, T Nosaka, T Onuma, K Nakajima, P Ahmet, T Aoyama, T Chikyow, SF Chichibu. Critical roles of decomposition-shielding layer deposited at low temperature governing the structural and photoluminescence properties of cubic GaN epilayers grown on (001)GaAs by metalorganic vapor phase epitaxy. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS. 2004. 43. 1. 106-110
M Sugiyama, T Nosaka, T Onuma, K Nakajima, P Ahmet, T Aoyama, T Chikyow, SF Chichibu. Critical roles of decomposition-shielding layer deposited at low temperature governing the structural and photoluminescence properties of cubic GaN epilayers grown on (001)GaAs by metalorganic vapor phase epitaxy. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS. 2004. 43. 1. 106-110
ONUMA T, CHICHIBU S F, UEDONO A, YOO Y-Z, CHIKYOW T, SOTA T, KAWASAKI M, KOINUMA H. Reduced defect densities in the ZnO epilayer grown on Si substrates by laser-assisted molecular-beam epitaxy using a ZnS epitaxial buffer layer. Applied Physics Letters. 2004. 85. 23. 5586-5588
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Education (4):
- 2001 University of Tsukuba
- 2001 University of Tsukuba Graduate School, Division of Physics Physics
- 1997 University of Tsukuba
- 1997 University of Tsukuba First Cluster of College College of Natural Science
Professional career (1):
MS (University of Tsukuba)
Association Membership(s) (4):
日本物理学会
, 応用物理学会
, The physical society of Japan
, The Japan society of applied physics
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