Rchr
J-GLOBAL ID：200901024264658289
Update date: Aug. 29, 2020
Fujiwara Hiroyuki
フジワラ ヒロユキ | Fujiwara Hiroyuki
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Affiliation and department：
National Institute of Advanced Industrial Science and Technology
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Homepage URL (1)：
http://www.aist.go.jp/RESEARCHERDB/cgi-bin/worker_detail.cgi?call=namae&rw_id=H55878661
Research field (2)：
Metallic materials
, Basic physical chemistry
Research theme for competitive and other funds (1)：
薄膜太陽電池
MISC (16)：
Hiroyuki Fujiwara, Michio Kondo. Effects of carrier concentration on the dielectric function of ZnO:Ga and In 2O 3:Sn studied by spectroscopic ellipsometry: Analysis of free-carrier and band-edge absorption. Physical Review B - Condensed Matter and Materials Physics. 2005. 71. 7. 0751109-1-075109-10
H Fujiwara, M Kondo. Effects of carrier concentration on the dielectric function of ZnO : Ga and In2O3 : Sn studied by spectroscopic ellipsometry: Analysis of free-carrier and band-edge absorption. PHYSICAL REVIEW B. 2005. 71. 7. 075109-1-075109-10
H Fujiwara, M Kondo. Real-time monitoring and process control in amorphous/crystalline silicon heterojunction solar cells by spectroscopic ellipsometry and infrared spectroscopy. APPLIED PHYSICS LETTERS. 2005. 86. 3. 032112-1-032112-3
H Fujiwara, M Kondo, A Matsuda. Nucleation mechanism of microcrystalline silicon from the amorphous phase. JOURNAL OF NON-CRYSTALLINE SOLIDS. 2004. 338. 97-101
H Fujiwara, M Kondo, A Matsuda. Real-time studies of amorphous and microcrystalline Si : H growth by spectroscopic ellipsometry and infrared spectroscopy. THIN SOLID FILMS. 2004. 455. 670-674
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