Research field (3)：
Electric/electronic material engineering
, Crystal engineering
, Applied materials
Research theme for competitive and other funds (2)：
MOCVD法によるInNのエピタキシャル成長
Epitaxial Growth of InN by MOCVD
MISC (5)：
Two-step Growth Epitaxial InN on GaP(III)B substrate using MOCVD. Extended Abstracts, Annual Meeting 2000 Hokuriku Chapters of Electrical Societies. 2000
High temperature Growth of InN on Gap(III)B Substrate. Extended Abstracts, The 61th Autumn Meeting Japan Society of Applied Physics. 2000
