Funato Mitsuru

Research field (2)： Crystal engineering , Applied materials

Research theme for competitive and other funds (30)：

2021 - 2025 Visible, long wavelength LEDs based on In-rich InGaN on ScAlMgO4 substrates
2020 - 2025 Light emitting synthesizer : aiming to create the ultimate lighting devices
2020 - 2021 ScAlMgO4基板上へのInリッチInGaN系LEDの実現
2016 - 2021 近接場分光(SNOM)による特異構造の発光機構解明と制御
2016 - 2021 Elucidation and control of carrier recombination processes for the realization of AlGaN-based ultra-high efficiency ultraviolet light emitting devices

2015 - 2020 Achievement of Tailor-made Lighting Sources by the Control of Nanoscopic Carrier Localization in Nitride Semiconductors

2016 - 2018 Fabrication of nitride-semiconductor-based light-emitters on a reusable substrate

2015 - 2016 深紫外近接場分光による超ワイドギャップ半導体の物性解明

2009 - 2014 Development of Key Technologies for the Multi-probe Spectroscopy based on Near-field Optics

2006 - 2011 Optoelectronics Frontier by Nitride Semiconductor-Ultimate Utilization of Nitride Semiconductor Material Potential-

2006 - 2010 Assessment and control of radiative/nonradiative recombination processes in In-rich InGaN and in Al-rich AlGaN

2007 - 2009 Development of nitride-semiconductor based green laser diodes on a novel semipolar plane

2006 - 2008 Development of key technologies for the measurement of luminescence dynamics in the nano-space

2003 - 2005 The assessment of emission mechanism in GaN-based nano-structures by scanning near-field optical microscopy

2003 - 2004 Research on precise artificial structure and position control of ultra-small nanodots, nanorods, and nanolines

2000 - 2002 Study on nonradiative recombination mechanism in widegap semiconductors

1999 - 2000 表面エネルギー変調エピタキシーによる半導体不整合系へテロ構造の作製

1998 - 2000 Basic Research for the Fabrication of Light Emitting Devices Utilizing Quantum Confined Exciton Molecules

1990 - 2000 II-VI/III-V異族半導体多層構造に関する研究

1990 - 2000 Study on II-VI/III-V hetero-valent multilayered structures

1999 - 1999 半導体/強磁性体薄膜多層構造による励起子磁気光学効果の創出

1999 - 六方晶 GaN の有機金属気相成長

1999 - MOVPE of Hexagonal GaN

1997 - 1998 原子価不整合系半導体ヘテロ界面の原子層レベル制御とバンド不連続量

1995 - 1997 Dynamics of Semiconductor Vapor Growth with Photocatalytic Surface Reactions

1997 - 立方晶GaNの有機金属気相成長

1997 - MOVPE of cubic GaN

1994 - 1994 異族半導体多層構造の作製と界面物性に関する研究

1993 - 1994 Epitaxial Growth of Novel II-VI Semiconductor Alloys for Ultraviolet Optical Devices

1993 - 1993 異族半導体AlGaAs-ZnSe新人工多層構造の作製と新物性に関する研究

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Papers (228)：

Ryota Ishii, Akira Yoshikawa, Mitsuru Funato, Yoichi Kawakami. Revisiting the substitutional Mg acceptor binding energy of AlN. Physical Review B. 2023. 108. 3
船戸充, 川上養一. GaN分子層量子井戸からの深紫外発光. Optronics : 光技術コーディネートジャーナル. 2023. 42. 5. 94-98
T Fukui, Y Matsuda, M Matsukura, T Kojima, M Funato, Y Kawakami. Interface formation mechanism of GaN on Al-pretreated ScAlMgO4 (0001) substrates. CRYSTAL GROWTH & DESIGN. 2023. 23. 4. 2739-2744
S Kaito, T Matsuyama, K Wada, M Funato, Y Kawakami, K Okamoto. Enhancement of the bandgap emission from GaN epilayer by surface plasmon resonance in the quadrupole oscillation mode using Ag nanoparticles protected by an oxide thin film. APPLIED PHYSICS LETTERS. 2023. 122. 15. 151110
R. Akaike, M. Funato, Y. Kawakami. Improved internal quantum efficiencies of far-UVC AlGaN/AlN quantum wells by the use of semipolar r-planes. Applied Physics Letters. 2023. 122. 13

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MISC (84)：

石井良太, 鹿田真一, 寺地徳之, 神田久生, 渡邊幸志, 船戸充, 川上養一. 深紫外CW・時間分解PL分光法による¹²C/¹³C超格子の光学特性評価. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2018. 65th
立石和隆, 船戸充, 川上養一, 岡本晃一, 玉田薫. アルミニウム被覆InGaN/GaN系量子井戸の表面プラズモン発光増強に対する顕微フォトルミネセンスマッピング. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2018. 65th
石井良太, 鹿田真一, 寺地徳之, 神田久生, 渡邊幸志, 船戸充, 川上養一. 深紫外CWレーザにより生成したダイヤモンド結晶中の極低温励起子に対する同位体効果. 応用物理学会秋季学術講演会講演予稿集(CD-ROM). 2017. 78th
立石和隆, 船戸充, 川上養一, 岡本晃一, 玉田薫. 顕微蛍光マッピングによる表面プラズモン発光増強の評価. 応用物理学会秋季学術講演会講演予稿集(CD-ROM). 2017. 78th
立石和隆, 船戸充, 川上養一, 岡本晃一, 玉田薫. InGaN系量子井戸の表面プラズモン発光増強現象の空間分解評価. 応用物理学会秋季学術講演会講演予稿集(CD-ROM). 2016. 77th

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応用物理学会

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