Rchr
J-GLOBAL ID：200901025733562138
Update date: Feb. 01, 2024
Naritsuka Shigeya
ナリツカ シゲヤ | Naritsuka Shigeya
Affiliation and department：
Research field (4)：
Electronic devices and equipment
, Electric/electronic material engineering
, Crystal engineering
, Applied materials
Research theme for competitive and other funds (38)：
- 2019 - 2023 Study on ultrashort pulsed semiconductor laser diodes for fluorescent bio-imaging
- 2019 - 2023 Operando EXAFS study on growth mechanism of carbon nanotube
- 2015 - 2020 Basic research for realization of heteroepitaxial growth platform
- 2014 - 2019 Invention of 3D Active sites in Advanced Semiconductors and Functional Materials
- 2014 - 2017 Growth of GaN template substrate by flow-assisted-mode liquid phase epitaxy
- 2013 - 2016 Fabrication of high-quality graphene by liquid phase epitaxial growth
- 2013 - 2015 Physics of highly polarized semiconductors and their application to deep ultraviolet light emitting devices
- 2010 - 2014 Approach from crystal growth to overcome limits of Si integrated circuits
- 2009 - 2012 Fabrication and property of CNT/SiC heterojunction formed by surface decomposition of SiC
- 2006 - 2009 Growth of dislocation-free GaN on Si substrates for long-life optical devices in opto-electronic integrated circuits
- 2005 - 2008 Carbon Nanotube Growth using photo-excitation
- 2002 - 2005 Realization of dislocation-free epitaxy using nanochannel epitaxy
- 2002 - 2003 低コスト太陽電池用半導体単結晶基板の新作製法
- 2000 - 2003 低角入射分子線エピタキシ法による絶縁膜上への半導体単結晶薄膜の横方向成長
- 2000 - 2002 Fabrication of VCSEL on dislocation free GaAs epitaxial layer grown on Si substrate
- 2002 - 結晶成長場制御によるナノ構造の作製
- 2002 - Fabrication of Nano-structre by Controlling the Growth Field
- 1999 - 2001 Band-engineering using III-V based ferromagnetic semiconductors and its application to magneto-optical devices
- 1999 - 2001 Ferromagnet/Semiconductor Hybrid Materials : Epitaxial Growth and Applications
- 1999 - 2000 ハイブリッドマイクロチャンネルエピタキシーを用いたSi上のGaAs無転位結晶
- 1998 - 1999 GROWTH OF HIGH QUALITY SEMICONDUCTORS BY CONTAINER LESS METHOD UNDER MICROGRAVITY
- 1998 - 1999 Studies of High Quality GaAs Layers Heteroepitaxially Grown on Si Substrates by Microchannel Epitaxy and Fabrication of Laser Diodes
- 1997 - 1999 STUDIES ON INTERSURFACE DIFFUSION IN NANO-STRUCTURE EPITAXY
- 1996 - 1998 Growth and properties of III-V-semiconductor/ferromagnet hybrid materials system (GaAs : Mn)
- 1995 - 1997 MELT GROWTH OF SEMICONDUCTORS IN WEIGHTLESS ENVIRONMENT
- 1995 - 1997 Studies of High Quality InP Layrs Heteroepitaxially Grown on Si Substrates by Epitaxial Lateral Overgrowth and Fabrication of Long-wavelengh Laser Diodes
- 結晶成長場制御を用いたナノ構造の作製
- Si基板上無転位GaAsエピタキシャル層を用いたレーザーダイオードと光集積回路の試作
- 格子定数差の大きいヘテロエピタキシ無転位化技術
- 有限要素法による半導体中の応力解析
- Si基板上の高寿命レーザーダイオードに関する研究
- Si基板上の化合物半導のヘテロエピタキシーに関する研究
- Fabrication of Nano-structre by Controlling the Growth Field
- Fabrication of laser diode and OEIC using dislocation free GaAs on Si substrate
- Dislocation free technology for highly lattice mismactch heteroepitaxy
- Studies of Residual Stress in Semicondutor Layers usig Finite Element Method
- Studies of Long-Life Laser Diodes fabricated on Si Substrates
- Studies of Compound Semiconductors Heteroepitaxially Grown on Si Substrates
Show all
Papers (139)：
-
Shusaku Karasawa, Kamal Prasad Sharma, Takahiro Saida, Shigeya Naritsuka, Yuichi Haruyama, Toru Asaka, Takahiro Maruyama. In situ XAFS study on chemical states of Co and Ir nanoparticles under conventional growth condition of single-walled carbon nanotube via alcohol catalytic chemical vapor deposition. Chemical Physics Letters. 2022. 808. 140135-140135
-
Asato Nakashima, Tomoaki Murahashi, Ryosuke Achiwa, Tatsuya Kashio, Takahiro Maruyama, Shigeya Naritsuka. Direct precipitation of multilayer graphene on c-plane sapphire using a crystallized Ni catalyst. Journal of Crystal Growth. 2022. 598. 126885-126885
-
Shusaku Karasawa, Kamal Prasad Sharma, Daiki Yamamoto, Takahiro Saida, Shigeya Naritsuka, Takahiro Maruyama. In situ XAFS study of the chemical state of a Co catalyst during single-walled carbon nanotube growth under conventional growth conditions using alcohol catalytic chemical vapor deposition. CHEMICAL PHYSICS LETTERS. 2022. 804
-
Tatsuya Kashio, Asato Nakashima, Tomoaki Murahashi, Ryosuke Achiwa, Takahiro Maruyama, Shigeya Naritsuka. Nanodiamond as the carbon source for precipitation of multilayer graphene on a Si substrate. JAPANESE JOURNAL OF APPLIED PHYSICS. 2022. 61. 6
-
Daiki Yamamoto, Shusaku Karasawa, Kamal Prasad Sharma, Takahiro Saida, Shigeya Naritsuka, Takahiro Maruyama. Iridium-Catalyzed Single-Walled Carbon Nanotube Synthesis by Alcohol-Gas-Source Method Under Low Ethanol Pressure: Growth Temperature Dependence. Crystal Research and Technology. 2022. 57. 6. 2100226-2100226
ｍore...
MISC (483)：
-
Niwa Kazuki, Fukami Takeshi, Nonogaki Masami, Kato Yukito, Ueda Yuki, Maruyama Takahiro, Naritsuka Shigeya. Growth temperature dependence of GaN nucleation on graphene/r-plane sapphire template. JSAP Annual Meetings Extended Abstracts. 2021. 2021.1. 2609-2609
-
Yamamoto Daiki, Kamal Sharma, Saida Takahiro, Narituka Shigeya, Maruyama Takahiro. Growth temperature dependence of SWCNT growth on SiO2/Si substrates by ACCVD using Ir catalyst. JSAP Annual Meetings Extended Abstracts. 2021. 2021.1. 2806-2806
-
Fukami Takeshi, Niwa Kazuki, Kobayashi Yuta, Maruyama Takahiro, Naritsuka Shigeya. Direct growth of multilayer graphene nucleation on insulating substrate using Ga-Ni solution. JSAP Annual Meetings Extended Abstracts. 2021. 2021.1. 2845-2845
-
Murahashi Tomoaki, Nakashima Asato, Maruyama Takahiro, Naritsuka Shigeya. Quality improvement of precipitated graphene using crystallized Ni layer. JSAP Annual Meetings Extended Abstracts. 2021. 2021.1. 2865-2865
-
Kashio Tatsuya, Fukami Takeshi, Niwa Kazuki, Nakashima Asato, maruyama Takahiro, Naritsuka Shigeya. In-situ X-ray diffraction analysis of graphene direct precipitation growth using nanodiamonds -- catalysis thickness dependence --. JSAP Annual Meetings Extended Abstracts. 2021. 2021.1. 2856-2856
ｍore...
Patents (25)：
Books (11)：
-
Chapter Four - Microchannel epitaxy of III-V layers on Si substrates Semiconductors and Semimetals, Vol. 101
Elsevier Ltd. 2019
-
Initial Growth Process of Carbon Nanotubes in Surface Decomposition of SiC
In Tech Co. 2011
-
新インターユニバーシティ 「固体電子物性」
オーム社 2009
-
Carbon Nanotube Growth by Surface Decomposition of SiC
NOVA Science Publishers 2009
-
薄膜ハンドブック(第2版)
2008
ｍore...
Works (4)：
-
化合物半導体発光素子の高速化
2001 -
-
Study of light emitting device of compound semiconductor
2001 -
-
Si基板上のInP無転位横方向成長の研究
1997 -
-
Study of dislocation free InP lateral growth on Si substrate
1997 -
Education (3)：
- 1993 - 1996 The University of Tokyo The Graduate School of Engineering
- 1979 - 1981 Tokyo Institute of Technology Interdisciplinary Graduate School of Science and Engineering
- 1975 - 1979 Nagoya Institute of Technology Faculty of Engineering
Professional career (2)：
- Doctor of Engineering (The University of Tokyo)
- Master of Engineering (Tokyo Institute of Technology)
Committee career (1)：
Association Membership(s) (4)：
日本物理学会
, 日本結晶成長学会
, 応用物理学会
, フラーレン・ナノチューブ・グラフェン学会
