Rchr
J-GLOBAL ID：200901026410851447   Update date: Jan. 30, 2024

SUZUKI TOSHI-KAZU

スズキ トシカズ | SUZUKI TOSHI-KAZU
Affiliation and department：
Japan Advanced Institute of Science and Technology

About Japan Advanced Institute of Science and Technology


Job title： Professor
Research field  (2)： Electric/electronic material engineering ,  Electronic devices and equipment
Research keywords  (2)： 半導体デバイス ,  化合物半導体
Research theme for competitive and other funds  (4)：
  • 2022 - 2025 界面電荷・歪分極エンジニアリングの併用による窒化物半導体デバイス閾値電圧制御
  • 2015 - 2018 Mid-infrared exciton control based on low-dimensional image charge effects in narrow-gap semiconductors
  • 2014 - 2017 Complementary vertical tunnel FET aiming for low voltage and high speed operation by heterostructure design and miniaturization
  • 2006 - 2007 Crystal growth of Sb-based compound semiconductors and jissoprocess for high-speed device circuits
Papers (26)：
  • Duong Dai Nguyen, Yuchen Deng, Toshi-kazu Suzuki. Low-frequency noise in AlTiO/AlGaN/GaN metal-insulator-semiconductor field-effect transistors with non-gate-recessed or partially-gate-recessed structures. SEMICONDUCTOR SCIENCE AND TECHNOLOGY. 2023. 38. 9
  • Kazuya Uryu, Yuchen Deng, Son Phuong Le, Toshi-kazu Suzuki. Electron mobility enhancement in n-GaN under Ohmic-metal. AIP ADVANCES. 2023. 13. 7
  • Kazuya Uryu, Shota Kiuchi, Taku Sato, Toshi-kazu Suzuki. Mechanism of low-temperature-annealed Ohmic contacts to AlGaN/GaN heterostructures: A study via formation and removal of Ta-based Ohmic-metals. Applied Physics Letters. 2022. 120. 5
  • Kazuya Uryu, Shota Kiuchi, Toshi-kazu Suzuki. Electrical characterization of AlGaN/GaN heterostructures under Ohmic metals by using multi-probe Hall devices. Applied Physics Letters. 2021. 119. 2
  • Duong Dai Nguyen, Takehiro Isoda, Yuchen Deng, Toshi-kazu Suzuki. Normally-off operations in partially-gate-recessed AlTiO/AlGaN/GaN field-effect transistors based on interface charge engineering. Journal of Applied Physics. 2021. 130. 1
ｍore...
Books (1)：
  • 「2013 化合物半導体技術大全」 第2編 第1章 「化合物半導体基板と結晶成長技術」
    電子ジャーナル出版 2013
Lectures and oral presentations  (3)：
  • Characterization and analysis of GaN-based MIS-HFETs --A method using capacitance-frequency-temperature mapping (Invited)
    (The 40th International Symposium on Compound Semiconductors (ISCS2013) 2013)
  • 異種材料融合集積に向けた狭ギャップ化合物半導体技術
    (電気学会調査専門委員会 2008)
  • Narrow-gap III-V semiconductor technology: lattice-mismatched growth and epitaxial lift-off for heterogeneous integration (Invited)
    (2008 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) 2008)
Professional career (3)：
  • PhD (The University of Tokyo)
  • MS (The University of Tokyo)
  • BS (The University of Tokyo)
Work history (1)：
  • Sony Corporation
Committee career (5)：
  • 応用物理学会 APEX/JJAP編集委員
  • 電気学会 次世代化合物半導体デバイスの機能と応用調査専門委員会 委員長
  • 日本電子工業振興協会 電子デバイス技術委員会・先端機能集積システム専門委員会
  • 電気学会 More Moore, More than Mooreにおける化合物半導体電子デバイス調査専門委員会
  • 電子情報通信学会 電子デバイス研究専門委員会
Awards (4)：
  • 2022/04 - IOP (Institute of Physics) Publishing IOP Outstanding Reviewer Award 2021
  • 2018/04 - The Japan Society of Applied Physics APEX/JJAP Editorial Contribution Award
  • 2018/03 - 電子情報通信学会 エレクトロニクスソサイエティ活動功労表彰
  • 2015/04 - The Japan Society of Applied Physics APEX/JJAP Editorial Contribution Award
Association Membership(s) (3)：
電気学会 ,  電子情報通信学会 ,  応用物理学会
※ Researcher’s information displayed in J-GLOBAL is based on the information registered in researchmap. For details, see here.

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