Rchr
J-GLOBAL ID:200901027204363424   Update date: Jan. 30, 2024

Sugano Takuo

スガノ タクオ | Sugano Takuo
Affiliation and department:
Research field  (1): Electronic devices and equipment
Research keywords  (1): 半導体電子工学
Research theme for competitive and other funds  (2):
  • 1998 - 2006 ナノエレクトロニクス
  • 1993 - 1995 Research on Single Electron Tunnel Device using substrates with small misorientations
Papers (11):
  • Tatsuya Yamada, Yoshikata Nakajima, Tatsuro Hanajiri, Toru Toyabe, Takuo Sugano. Improvement of electrical characteristics of local BOX MOSFETs by heavily doped structures and elucidation of the related mechanism. JOURNAL OF COMPUTATIONAL ELECTRONICS. 2014. 13. 2. 400-407
  • Tatsuya Yamada, Yoshikata Nakajima, Tatsuro Hanajiri, Takuo Sugano. Suppression of Drain-Induced Barrier Lowering in Silicon-on-Insulator MOSFETs Through Source/Drain Engineering for Low-Operating-Power System-on-Chip Applications (vol 60, pg 260, 2013). IEEE TRANSACTIONS ON ELECTRON DEVICES. 2013. 60. 12. 4281-4283
  • Tatsuya Yamada, Shumpei Abe, Yoshikata Nakajima, Tatsuro Hanajiri, Toru Toyabe, Takuo Sugano. Quantitative Extraction of Electric Flux in the Buried-Oxide Layer and Investigation of Its Effects on MOSFET Characteristics. IEEE TRANSACTIONS ON ELECTRON DEVICES. 2013. 60. 12. 3996-4001
  • Tatsuya Yamada, Yoshikata Nakajima, Tatsuro Hanajiri, Takuo Sugano. Suppression of Drain-Induced Barrier Lowering in Silicon-on-Insulator MOSFETs Through Source/Drain Engineering for Low-Operating-Power System-on-Chip Applications. IEEE TRANSACTIONS ON ELECTRON DEVICES. 2013. 60. 1. 260-267
  • Yoshikata Nakajima, Yukitoshi Watanabe, Tatsuro Hanajiri, Toru Toyabe, Takuo Sugano. Local-Stress-Induced Trap States in SOI Layers With Different Levels of Roughness at SOI/BOX Interfaces. IEEE ELECTRON DEVICE LETTERS. 2011. 32. 3. 237-239
more...
MISC (2):
  • Yoshikata Nakajima, Yukitoshi Watanabe, Tatsuro Hanajiri, Toru Toyabe, Takuo Sugano. Correlation between high-density trap states and local stress near SOI/BOX interface in SIMOX wafers. 2009 International Semiconductor Device Research Symposium, ISDRS '09. 2009
  • 菅野 卓雄. 工学における量子力学 (量子力学と先端技術<特集>). 数理科学. 1987. 25. 4. p5-11
Education (1):
  • - 1959 東京大学大学院 工学系研究科 電気工学専門課程博士課程
Professional career (1):
  • 工学博士、工学修士
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