Research field (5):
Energy chemistry
, Electronic devices and equipment
, Electric/electronic material engineering
, Crystal engineering
, Applied materials
TANAKA T., WAKAHARA A., OHSHIMA T., ITOH H., OKADA S., YOSHIDA A. Effect of impurity in CuInSe_2 by ion implantation. IEICE technical report. Electron devices. 1999. 99. 63. 77-82
Characteristics of reactive ion etching for zinc telluride (共著)
Recent Research Developments in Physics. 4 , Transworld Research Network, Chapter 7, pp123-132 2003 ISBN:8178950782
CuInSe2 and its related thin films prepared by rf sputtering and laser ablation methods (共著)
Ternary and Multinary Compounds in the 21st Century (Edited by T. Matsumoto, The Institute of Pure and Applied Physics(IPAP)) pp.145-150 2001 ISBN:4900526169
Growth rate characteristics and photoluminescence properties of ZnTe grown by MOVPE and photo-assisted MOVPE (共著)
Recent Advances in Applied Physics (Global Research Network) Vol. 2, pp.69-91 2001 ISBN:8187736283
Lectures and oral presentations (482):
Near-infrared light-emitting devices based on Tm-doped gallium oxides
(The 6th Asian Applied Physics Conference (Asian-APC), 5 December, 2021, Online, 5Ea-P13 2021)
The effect of thermal annealing on the optical properties of europium doped Ga2O3 films
(The 6th Asian Applied Physics Conference (Asian-APC), 5 December, 2021, Online, 5Ea-P12 2021)
Epitaxial growth of rutile GeO2 film on sapphire substrate by pulsed laser deposition
(The 6th Asian Applied Physics Conference (Asian-APC), 5 December, 2021, Online, 5Ea-P2 2021)
Growth and characterization of Al-doped and undoped Zn1-xCdxO by molecular beam epitaxy under high oxygen flow rate
(The 6th Asian Applied Physics Conference (Asian-APC), 4 December, 2021, Online, 4Ep-6 2021)