Rchr

J-GLOBAL ID：200901029312612115 Update date: Jan. 17, 2024

Tsukazaki Atsushi

ツカザキアツシ | Tsukazaki Atsushi

Affiliation and department：
Job title： post doctoral fellow

Research field (2)： Crystal engineering , Applied materials

Research keywords (4)：薄膜 , 結晶成長 , Thinfilm , Crystal Growth

Research theme for competitive and other funds (1)：

コンビナトリアル手法を用いた酸化亜鉛の価電子制御

MISC (5)：

A. Tsukazaki, A. Ohtomo, S. Yoshida, M. Kawasaki, C. H. Chia, T. Makino, Y. Segawa, T. Koida, S. F. Chichibu, H. Koinuma. Layer-by-layer growth of high-optical-quality ZnO film on atomically smooth and lattice relaxed ZnO buffer layer. Applied Physics Letters. 2003. 83. 14. 2784-2786
A Tsukazaki, A Ohtomo, S Yoshida, M Kawasaki, CH Chia, T Makino, Y Segawa, T Koida, SF Chichibu, H Koinuma. Layer-by-layer growth of high-optical-quality ZnO film on atomically smooth and lattice relaxed ZnO buffer layer. APPLIED PHYSICS LETTERS. 2003. 83. 14. 2784-2786
Layer-by-layer growth of high-optical-quality ZnO film on atomically smooth and lattice relaxed ZnO buffer layer. Applied Physics Letters. 2003. 83, 2784
A Tsukazaki, H Saito, K Tamura, M Ohtani, H Koinuma, M Sumiya, S Fuke, T Fukumura, M Kawasaki. Systematic examination of carrier polarity in composition spread ZnO thin films codoped with Ga and N. APPLIED PHYSICS LETTERS. 2002. 81. 2. 235-237
A Tsukazaki, H Saito, K Tamura, M Ohtani, H Koinuma, M Sumiya, S Fuke, T Fukumura, M Kawasaki. Systematic examination of carrier polarity in composition spread ZnO thin films codoped with Ga and N. APPLIED PHYSICS LETTERS. 2002. 81. 2. 235-237

Professional career (1)：

工学修士 (東京工業大学)

Awards (1)：

2002 - 応用物理学会講演奨励賞

Association Membership(s) (2)：

応用物理学会 , The Japan Society of Applied Physics

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