Rchr
J-GLOBAL ID：200901030990037781
Update date: Dec. 06, 2023
Tadatomo Kazuyuki
Tadatomo Kazuyuki
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Affiliation and department：
Yamaguchi University
About Yamaguchi University
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Homepage URL (1)：
http://device.eee.yamaguchi-u.ac.jp/
Research keywords (1)：
Semiconductor,Wide Bandgap Semiconductor, Opto-electronic Devices, Power Devices
Research theme for competitive and other funds (4)：
2016 - 2021 高品質AlN結晶基板を用いた最短波長領域高出力深紫外LDの研究開発
2016 - 2021 様々な種結晶の検討による低コスト・オンデマンドGaN基板製造技術の構築
2013 - 2019 Japan Science and Technology Agency
2013 - 2018 高品位GaN基板の開発
Papers (75)：
Hideaki Murotani, Kazunori Shibuya, Ayumu Yoneda, Yuki Hashiguchi, Hiroyuki Miyoshi, Satoshi Kurai, Narihito Okada, Kazuyuki Tadatomo, Yoshiki Yano, Toshiya Tabuchi, et al. Analysis of efficiency curves in near-UV, blue, and green-emitting InGaN-based multiple quantum wells using rate equations of exciton recombination. Japanese Journal of Applied Physics. 2019. 58. SC. SCCB02-1-SCCB02-5
Tatsuya Ezaki, Yusuke Shigefuji, Narihito Okada, Kazuyuki Tadatomo. High-quality GaN crystals grown from double-polarity hydride vapor phase epitaxy and single-polarization regrowth. Japanese Journal of Applied Physics. 2019. 58. SC1019-1-SC1019-6
Fijun Kim, Hiroki Ikeuchi, Kohei Nojima, Narihito Okada, Kazuyuki Tadatomo. Effect of off-angle of stripe patterns on facet stability and embedding in selectivearea hydride vapor phase epitaxy growth. Japanese Journal of Applied Physics. 2019. 58. SC1001-1-SC1001-5
N. Okada, Y. Inomata, H. Ikeuchi, S. Fujimoto, H. Itakura, S. Nakashima, R. Kawamura, K. Tadatomo. Characterization of high-quality relaxed flat InGaN template fabricated by combination of epitaxial lateral overgrowth and chemical mechanical polishing. Journal of Crystal Growth. 2019. 512. 147-151
Kohei Sugimoto, Narihito Okada, Satoshi Kurai, Yoichi Yamada, Kazuyuki Tadatomo. Separation of effects of InGaN/GaN superlattice on performance of light-emitting diodes using mid-temperature-grown GaN layer. Japanese Journal of Applied Physics. 2018. 57. 6. 062101-1-062101-5
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Patents (27)：
半導体基板の製造方法
下地基板
半導体基板の製造方法
半導体基板及びその製造方法、並びにそれに用いる気相成長装置
半導体発光素子の製造方法
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Books (2)：
III-Nitride Based Light Emitting Diodes and Application
Springer 2013
Wide Gap Semiconductor Opticak and Electronic Devices
Morikita 2006 ISBN:4627773218
Lectures and oral presentations (288)：
Fabrication and evaluation of multiple-quantum wells on high-quality relaxed InGaN template fabricated by combination of ELO and CMP
(2018)
N極性AlNにおける表面平坦性のサファイア基板オフ角依存性
(第66回応用物理学会春季学術講演会 2018)
半極性InGaN/GaN量子井戸の表面プラズモン共鳴による発光増強
(第66回応用物理学会春季学術講演会 2018)
中温GaN層上InGaN多重量子井戸構造におけるVピット近傍のポテンシャル障壁の顕微分光評価(2)
(第66回応用物理学会春季学術講演会 2018)
AlN構造体を形成した基板へのGaN結晶成長
(第66回応用物理学会春季学術講演会 2018)
ｍore...
Works (1)：
非公開
Education (2)：
1978 - 1980 Osaka University Graduate School of Science and Engineering Chemical Division
1974 - 1978 Osaka University Faculty of Science and Engineering Department of Chemical Engineering
Professional career (3)：
Doctor of Engineering (Yamaguchi University)
Master (Engineering) (Osaka University)
工学士 (大阪大学)
Work history (3)：
2013/03 - YAMAGUCHI UNIVERSITY Graduate School of Science and Engineering(Engineering) Professor
2004/06 - 2013/02 YAMAGUCHI UNIVERSITY Graduate School of Science and Engineering(Engineering) Professor
1980/09/01 - 2004/05/30 Mitsubishi Cable Industries LTD. 研究員
Committee career (2)：
2018/04 - 現在 日本ファインセラミックス協会 GaN結晶の転位検出方法に関する国際標準化
2011/04 - 現在 日本学術振興会 162委員会 企画運営委員
Association Membership(s) (3)：
The Illuminating Engineering Institute of Japan
, The Japanese Association for Crystal Growth
, The Japan Society of Applied Physics
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