Hashimoto Tamotsu

ハシモトタモツ | Hashimoto Tamotsu

Affiliation and department：
Job title： Researcher
Homepage URL (1)： http://www.aist.go.jp/RESEARCHERDB/cgi-bin/worker_detail.cgi?call=namae&rw_id=T55878661

Research field (5)： Structural and functional materials , Composite materials and interfaces , Inorganic materials , Bio-, chemical, and soft-matter physics , Mathematical physics and basic theory

Research keywords (1)：欠陥第一原理計算分子動力学計算磁性誘電体

Research theme for competitive and other funds (1)：

1.Ge 表面構造 2.窒化炭素の安定構造 3.窒化珪素の安定構造

MISC (8)：

T Hashimoto, Y Morikawa, K Terakura. Stability and electronic structure of Ge(105)1x2: a first-principles theoretical study. SURFACE SCIENCE. 2005. 576. 1-3. 61-66
Hydrogen-Induced Instability of the Ge(105) Surface. PHYSICAL REVIEW LETTERS. 2005. 94. 8. 86105-1-86105-4
T Eguchi, Y Fujikawa, K Akiyama, T An, M Ono, T Hashimoto, Y Morikawa, K Terakura, T Sakurai, MG Lagally, et al. Imaging of all dangling bonds and their potential on the Ge/Si(105) surface by noncontact atomic force microscopy. PHYSICAL REVIEW LETTERS. 2004. 93. 26. 266102-1-266102-4
S Ishibashi, T Hashimoto, M Kohyama, K Terakura. Ab initio electronic structure study for TTF-TCNQ under uniaxial compression. PHYSICAL REVIEW B. 2004. 69. 15. 155111-1-155111-7
Origin of the stability of Ge(105) on Si - a new structure model and surface strain relaxation. PHYSICAL REVIEW LETTERS. 2002. 88. 17. 176101-1-176101-4

ｍore...

Association Membership(s) (1)：

日本物理学会

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