Rchr

J-GLOBAL ID：200901034279641132 Update date: Aug. 27, 2020

Hiyamizu Satoshi

ヒヤミズサトシ | Hiyamizu Satoshi

Affiliation and department：
Job title： Professor

Research field (2)： Crystal engineering , Applied materials

Research keywords (4)：半導体物理 , 薄膜結晶成長 , Semiconductor Physics , Crystal Growth of Thin Film

Research theme for competitive and other funds (6)：

(775)B自然形成型GaAs量子細線
(411)A 超平坦III-V化合物半導体ヘテロ界面
分子線エピタキシャル法によるIII-V化合物半導体の量子井戸,量子細線
(775)B self -organized GaAs quantum wires
(411)A super-flat hetero-interface III-V compounds semiconductores

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MISC (74)：

ｍore...

Books (4)：

1.5μm range self-organized In 0.65Ga0.35As/In0.52Al0.48As quantum wire structure grown on (775)B-oriented InP substrates by molecular beam epitaxy
Mat.Res.Soc.Symp.Proc. 2003
最新半導体工学
朝倉書店 1993
Improved GaAs/AlAs multilayer structures grown by MBE on patterned GaAs(100)Substrates with ridges along the[001]direction
Semiconductor Science and Technology 1993
Characteristics of Two-Dimensional Electron Gas in III-V Compound Heterostructures Grown by MBE
Semiconductors and Semimetals 1990

Works (3)：

(米国特許出願)
1993 -
(特許出願)GaAs/AlGaAs薄膜の成長方法
1993 -
Method of Forming GaAs/AlGaAs Hetero-Structure and GaAs/AlGaAs Hetero-Structure Obtained by the Method
1993 -

Education (2)：

- 1972 Osaka University
- 1972 Osaka University Graduate School, Division of Engineering Science

Professional career (1)：

(BLANK) (Osaka University)

Work history (6)：

1987 - - 大阪大学教授
1987 - - Osaka University, Professor
1981 - 1986 富士通研究所室長
1981 - 1986 Fujitsu Laboratories Ltd., Manager
1973 - 1980 富士通研究所研究員

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Awards (5)：

1998 - SSDM賞
1991 - 大阪科学賞
1990 - 米国IEEEモーリスN.リーブマン賞
1982 - 電子通信学会業績賞
1981 - 応用物理学会論文賞

Association Membership(s) (4)：

米国IEEE , 電子情報通信学会 , 日本物理学会 , 応用物理学会

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