Rchr
J-GLOBAL ID：200901036470194904   Update date: Jan. 30, 2024

Sakuraba Masao

サクラバ マサオ | Sakuraba Masao
Affiliation and department：
Tohoku University Research Institute of Electrical Communication, Information Devices Division, Nano-Integration Devices and Systems

About Tohoku University Research Institute of Electrical Communication, Information Devices Division, Nano-Integration Devices and Systems


Job title： Associate Professor
Homepage URL  (1)： http://www5a.biglobe.ne.jp/~tenrou/
Research field  (4)： Electric/electronic material engineering ,  Thin-film surfaces and interfaces ,  Crystal engineering ,  Applied materials
Research keywords  (6)： large-scale integration process ,  plasma chemical vapor deposition ,  epitaxial growth ,  group IV semiconductor ,  quantum effect device ,  Strained heterostructure
Research theme for competitive and other funds  (28)：
  • 2016 - 現在 Crystal structure transformation process of nano-meter thick film
  • 2001 - 現在 Low-damage plasma CVD process without substrate heating for epitaxial growth of highly strained group IV semiconductors
  • 1995 - 現在 Evaluation and analysis methods for advanced materials and nanostructures
  • 1994 - 現在 Fabrication of high-performance nanodevices utilizing group IV semiconductor quantum heterostructures
  • 1989 - 現在 Large-scale integration process of group IV semiconductor quantum heterostructures
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Papers (216)：
  • Yifan Dai, Hideaki Yamamoto, Masao Sakuraba, Shigeo Sato. Computational Efficiency of a Modular Reservoir Network for Image Recognition. Frontiers in Computational Neuroscience. 2021. 15
  • Yoshihiro Osakabe, Shigeo Sato, Hisanao Akima, Mitsunaga Kinjo, Masao Sakuraba. Learning rule for a quantum neural network inspired by Hebbian learning. IEICE Transactions on Information and Systems. 2021. E104D. 2. 237-245
  • Wu Li, Masao Sakuraba, Shigeo Sato. Electron-cyclotron resonance Ar plasma-induced electrical activation of B atoms without substrate heating in B doped Si epitaxial films on Si(100). Materials Science in Semiconductor Processing. 2020. 107
  • Shigeo Sato, Yuki Tamura, Satoshi Moriya, Tatsuki Kato, Masao Sakuraba, Yoshihiko Horio, Jordi Madrenas. A spiking neuron MOS circuit for low-power neuromorphic computation. Proceedings of International Symposium on Nonlinear Theory and Its Applications. 2019. 80-80
  • Yuki Tamura, Satoshi Moriya, Tatsuki Kato, Masao Sakuraba, Yoshihiko Horio, Shigeo Sato. An Izhikevich model neuron MOS crcuit for low voltage operation. Proceedings of 28th International Conference on Artificial Neural Networks. 2019. 718-723
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MISC (14)：
  • A Study on Synaptic Weight Resolution in Hardware Implementation of Deep Neural Network. 2016. 116. 59. 23-28
  • Osakabe Yoshihiro, Sato Shigeo, Akima Hinasao, Sakuraba Masao, Kinjo Mitsunaga. C-8-20 A Study on Adiabatic Quantum Computation with a Brain-inspired Learning Rule. Proceedings of the IEICE General Conference. 2016. 2016. 2. 48-48
  • 林茂人, 福田幸夫, 室田淳一, 櫻庭政夫, 小野俊郎. ナノ多層構造酸窒化誘電体の電気的特性. 精密工学会東北支部学術講演会講演論文集. 2011. 9-10
  • 小野俊郎, 室田淳一, 櫻庭政夫, 豊田宏, 福田幸夫. ECRスパッタ法による高誘電体ゲート膜の基板界面品質制御. 東北大学電気通信研究所研究活動報告. 2011. 17. 112-114
  • SAKURABA Masao, MUTO Daisuke, MORI Masaki, SUGAWARA Katsutoshi, MUROTA Junichi. Epitaxial Growth of Group IV Semiconductor in ECR Plasma Enhanced CVD. 2006. 2006. 15. 39-43
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Patents (17)：
  • 半導体デバイス
  • 電界効果トランジスタ及びその製造方法
  • SEMICONDUCTOR DEVICE HAVING A METAL-SEMICONDUCOR JUNCTION WITH A REDUCED CONTACT RESISTANCE
  • 半導体装置
  • SEMICONDUCTOR DEVICE HAVING A METAL-SEMICONDUCOR JUNCTION WITH A REDUCED CONTACT RESISTANCE
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Books (7)：
  • Chapter 4: Low-Energy Plasma CVD for Epitaxy and In-Situ Doping of Group-IV Semiconductors in Nanoelectronics (in "Chemical Vapor Deposition (CVD): Types, Uses and Selected Research" (ebook), Edited by Monica Powell, https://www.novapublishers.com/catalog
    Nova Science Publishers, Inc. 2017 ISBN:9781536109085
  • Chapter 4: Low-Energy Plasma CVD for Epitaxy and In-Situ Doping of Group-IV Semiconductors in Nanoelectronics (in "Chemical Vapor Deposition (CVD): Types, Uses and Selected Research" (Book), Edited by Monica Powell, pp.61-115, https://www.novapublishers.c
    Nova Science Publishers, Inc. 2017 ISBN:9781536108934
  • 薄膜ハンドブック(第2版,日本学術振興会薄膜第131委員会編), http://bit.ly/1Qt1cTk
    オーム社 2008 ISBN:9784274205194
  • 新訂版・表面科学の基礎と応用, http://bit.ly/1T0TZRl
    エヌ・ティー・エス社 2004 ISBN:4860430514
  • 21世紀版・薄膜作成応用ハンドブック, http://bit.ly/1LBSnFw
    エヌ・ティー・エス社 2003 ISBN:9784860430191
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Lectures and oral presentations  (303)：
  • Epitaxy and In-Situ Doping of Group-IV Semiconductors by Low-Energy Plasma CVD for Nanoelectronics
    (11th Int. WorkShop on New Group IV Semiconductor Nanoelectronics 2018)
  • Si-Ge Alloy and Si Epitaxy by Low-Energy Plasma CVD for Semiconductor Device Fabrication
    (JSPS - FZ-Juelich Workshop -Atomically Controlled Processing for Ultra-large Scale Integration- 2016)
  • Epitaxy and In-Situ Doping of Group-IV Semiconductors by Low-Energy Plasma CVD for Quantum Heterointegration in Nanoelectronics
    (Energy Materials Nanotechnology (EMN) Meeting on Epitaxy 2016)
  • Electronic Properties of Si/Si-Ge Alloy/Si(100) Heterostructures Formed by ECR Ar Plasma CVD without Substrate Heating
    (7th Int. Symp. on Control of Semiconductor Interfaces (ISCSI-VII) & Int. SiGe Technol. and Device Meeting (ISTDM 2016) 2016)
  • In-Situ B Doping Control in Si Film Deposition Using ECR Ar Plasma CVD without Substrate Heating
    (7th Int. Symp. on Control of Semiconductor Interfaces (ISCSI-VII) & Int. SiGe Technol. and Device Meeting (ISTDM 2016) 2016)
ｍore...
Education (3)：
  • 1992 - 1995 Tohoku University Graduate School of Engineering Department of Electrical and Communications Engineering, Doctor of Engineering
  • 1990 - 1992 Tohoku University Graduate School of Engineering Department of Electrical and Communications Engineering, Master Course, Master of Engineering
  • 1986 - 1990 Tohoku University School of Engineering Department of Electrical Engineering, Bachelor of Engineering
Professional career (1)：
  • 博士(工学) (Tohoku University)
Work history (6)：
  • 2023/04 - 現在 東北大学 電気通信研究所 附属ナノ・スピン実験施設 ナノ集積デバイス・システム研究室 量子へテロ構造高集積化プロセス研究部 准教授
  • 2012/04 - 2023/03 東北大学 電気通信研究所 附属ナノ・スピン実験施設 ナノ集積デバイス・プロセス研究室 量子へテロ構造高集積化プロセス研究部 准教授
  • 2007/04 - 2012/03 東北大学 電気通信研究所 附属ナノ・スピン実験施設 ナノへテロプロセス研究室 量子へテロ構造高集積化プロセス研究部 准教授
  • 2004/04 - 2007/03 東北大学 電気通信研究所 附属ナノ・スピン実験施設 ナノへテロプロセス研究部 助教授
  • 2002/08 - 2004/03 東北大学 電気通信研究所 附属超高密度・高速知能システム実験施設 原子制御プロセス部 助教授
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Committee career (11)：
  • 2014/03 - 現在 (社)応用物理学会 シリコンテクノロジー分科会 ULSIデバイス研究委員会, 幹事
  • 2013/04 - 2015/03 (社)応用物理学会 論文賞委員会
  • 2010/04 - 2012/03 (社)応用物理学会 和文機関紙「応用物理」編集委員会委員
  • 2008/02 - 2010/01 (社)電気学会 新IV族原子制御デバイス材料技術調査専門委員会 幹事補佐
  • 2008/01 - 2009/12 (社)応用物理学会 東北支部 庶務幹事
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Awards (3)：
  • 2015/11/27 - (財)石田實記念財団 平成27年度 石田實記念財団 研究奨励賞 「IV族半導体量子ヘテロ構造高集積化のためのプラズマCVDプロセスに関する研究」
  • 2002/03/26 - (財)トーキン科学技術振興財団 第12回(平成13年度) トーキン科学技術振興財団 研究奨励賞 「原子層積層によるIV族半導体量子ヘテロ構造の製作」
  • 1992/08/26 - 固体素子・材料に関する国際会議 Young Researcher Award, 1992 International Conference on Solid State Devices and Materials (SSDM'92) 【対象論文】 “Atomic Layer Control of Germanium and Silicon on Silicon Using Flash Heating in Ultraclean Chemical Vapor Deposition”
Association Membership(s) (2)：
The Electrochemical Society ,  応用物理学会
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