Rchr
J-GLOBAL ID：200901041438854998   Update date: Jan. 30, 2024

Inoue Isao

イノウエ イサオ | Inoue Isao
Affiliation and department：
National Institute of Advanced Industrial Science and Technology Research Institute for Advanced Electronics and Photonics

About National Institute of Advanced Industrial Science and Technology Research Institute for Advanced Electronics and Photonics


Job title： Chief Senior Researcher
Homepage URL  (1)： https://sites.google.com/view/isao/
Research field  (1)： Magnetism, superconductivity, and strongly correlated systems
Research keywords  (21)： single crystal growth ,  quantum critical point ,  superconductivity ,  Parylene ,  SrTiO3 ,  attractor ,  neuromorphic ,  artificial synapse ,  artificial neuron ,  memristor ,  resistive random access memory (RRAM) ,  field effect transistor (FET) ,  fermiology ,  quantum oscillation ,  oxygen isotope effect ,  oxygen deficiency ,  transition metal oxides ,  high energy spectroscopy ,  effective mass ,  Mott transition ,  strongly correlated electron systems
Research theme for competitive and other funds  (10)：
  • 2018 - 2023 Concerted research in physics of anomalous phenomena around metal-insulator transition and development of neuromorphic devices
  • 2015 - 2018 Challenge for implementing a Mott FET on thin films of Mott insulators
  • 2015 - 2018 Field effect control of correlated electron systems for a prototype of Mott FET
  • 2013 - 2017 Field effect control of electronic phase of strongly correlated electron oxide by using solid gate insulator
  • 2013 - 2016 ハイブリッド固体ゲート絶縁膜を用いた新奇なモットトランジスタの開発
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Papers (83)：
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MISC (78)：
  • Alejandro Schulman, Kitoh Ai, Pablo Stoliar, Marcelo Rozenberg, Inoue Isao. Implementation of insulator-2D metal transitions for neuromorphic devices. Meeting Abstracts of the Physical Society of Japan. 2017. 72. 0. 1988-1988
  • Neeraj Kumar, Alejandro Schulman, Ai Kitoh, Pablo Stoliar, Inoue Isao. Insulator to metal transition on the (100) surface of SrTiO3 single crystal concomitant with the appearance of negative capacitance. Meeting Abstracts of the Physical Society of Japan. 2016. 71. 0. 2200-2200
  • Inoue Isao H. Present Status of RRAM Research. 日本物理学会誌. 2015. 70. 11. 814-823
  • 浅沼周太郎, 島久, 山田浩之, 井上公, 赤穗博司, 秋永広幸, 澤彰仁. HfO2ゲート酸化膜を用いた強相関酸化物(Nd,Sm)NiO3の電子相制御. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2013. 60th. ROMBUNNO.28A-F2-4
  • Tomioka Y, Ito T, Inoue I. 20aPS-89 Transport properties of Bi_2Te_3. Meeting Abstracts of the Physical Society of Japan. 2010. 65. 0. 540-540
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Patents (18)：
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Education (2)：
  • 1990 - 1992 University of Tokyo Graduate School Department of Physics
  • 1986 - 1990 University of Tokyo Faculty of Science Department of Physics
Professional career (1)：
  • DSc (University of Tokyo)
Work history (5)：
  • 2022/10 - 現在 National Institute of Advanced Industrial Science and Technology Chief Senior Researcher
  • 2022/02 - 現在 University of Tsukuba Faculty of Pure and Applied Sciences Professor
  • 2001/04 - 2022/09 National Institute of Advanced Industrial Science and Technology Senior Researcher
  • 1998/11 - 2001/03 Electrotechnical Laboratory Physical Science Division Senior Research Officer
  • 1992/04 - 1998/10 Electrotechnical Laboratory Physical Science Division Research Officer
Committee career (4)：
  • 2018/04 - 現在 National Institute of Science and Technol- ogy Policy, MEXT Experts Committee Member
  • 2018/04 - 現在 文科省 科学技術・学術政策研究所 科学技術予測センター 専門調査員
  • 2011/07 - 2013/06 National Personnel Authority Experts Committee Member
  • 2011/07 - 2013/06 人事院 国家公務員試験専門委員
Association Membership(s) (2)：
JAPANESE NEURAL NETWORK SOCIETY ,  日本物理学会
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