Rchr
J-GLOBAL ID:200901042840175289   Update date: Mar. 30, 2024

Chikyow Toyohiro

Chikyow Toyohiro
Research field  (1): Nanomaterials
Research keywords  (11): 透過型電子顕微鏡 ,  誘電体 ,  酸化物 ,  界面 ,  半導体 ,  コンビナトリアル ,  Ferroelectric ,  Oxide ,  Interface ,  Semiconductor ,  Combinatorial
Research theme for competitive and other funds  (8):
  • 2021 - 2024 Automation of Data-Driven Multidimensional Materials Design and Acceleration of Synthesis for New Materials Discovery
  • 2016 - 2019 メゾポーラス材料を使った新しい電子材料の創生とデバイスへの応用
  • 2009 - 2014 Fundamental studies on the low-cost production of high-density BN films by laser-plasma synchronous vapor deposition methods for the next-generation transparent wide bandgap semiconductor materials
  • 2007 - 2010 Research on nano-scale semiconductor devices based on the electronic properties of atomic-scale silicon crystals
  • 2007 - 2008 Interface structure and hydrogen detection of Schottky contact to polar-ZnO single crystal
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Papers (431):
  • Asahiko Matsuda, Takashi Teramoto, Takahiro Nagata, Dominic Gerlach, Peng Shen, Shigenori Ueda, Takako Kimura, Christian Dussarrat, Toyohiro Chikyow. NF3 and F2 gas fluorination of GaN surface and Pt/GaN interface analyzed by hard X-ray photoelectron spectroscopy. Applied Surface Science. 2024. 659. 159941-159941
  • Takahiro Nagata, Yuya Suemoto, Yoshihiro Ueoka, Masami Mesuda, Liwen Sang, Toyohiro Chikyow. Polarity Control of an All-Sputtered Epitaxial GaN/AlN/Al Film on a Si(111) Substrate by Intermediate Oxidization. ACS Omega. 2022. 7. 23. 19380-19387
  • Masaya Morita, Keiji Ishibashi, Kenichiro Takahashi, Shigenori Ueda, Jun Chen, Kota Tatejima, Toyohiro Chikyow, Atsushi Ogura, Takahiro Nagata. Effect of reactive gas condition on nonpolar AlN film growth on MnS/Si (100) by reactive DC sputtering. Japanese Journal of Applied Physics. 2022. 61. SC
  • T. Fukushima, H. Akai, T. Chikyow, H. Kino. Automatic exhaustive calculations of large material space by Korringa-Kohn-Rostoker coherent potential approximation method applied to equiatomic quaternary high entropy alloys. Physical Review Materials. 2022. 6. 2
  • Takahiro Nagata, Somu Kumaragurubaran, Kenichiro Takahashi, Sung Gi Ri, Toyohiro Chikyow. Combinatorial Synthesis and Interface Analysis for Development of High Dielectric Constant Thin Films. ECS Transactions. 2022. 108. 2. 61-68
more...
MISC (47):
  • YAGYU Shinjiro, YOSHITAKE Michiko, CHIKYOW Toyohiro. Determination of Threshold of Photoelectron Yield Spectroscopy (PYS) Using Machine Learning. Vacuum and Surface Science. 2018. 61. 4. 196-199
  • Mohamed B. Zakaria, Toyohiro Chikyow. Recent advances in Prussian blue and Prussian blue analogues: synthesis and thermal treatments. Coordination Chemistry Reviews. 2017. 352. 328-345
  • 女屋 崇, 生田目 俊秀, 澤本 直美, 大井 暁彦, 池田 直樹, 知京 豊裕, 小椋 厚志. ZrO2シード層がHf[x]Zr1-xO2薄膜の強誘電性へ及ぼす効果-Effect of ZrO2 seed layer on ferroelectricity of Hf[x]Zr1-xO2 thin film-シリコン材料・デバイス. 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報. 2017. 117. 260. 39-44
  • YAGYU Shinjiro, YOSHITAKE Michiko, CHIKYOW Toyohiro. Distingush of threthold ofphotoelectron yield spectroscopy (PYS) using machine learning. Abstract of annual meeting of the Surface Science of Japan. 2017. 37. 0
  • 女屋 崇, 生田目 俊秀, 澤田 朋実, 栗島 一徳, 澤本 直美, 大井 暁彦, 知京 豊裕, 小椋 厚志. ZrO2/Al2O3/ZrO2多層を用いたDRAMキャパシタにおけるAl2O3層が電気特性に及ぼす効果-Effect of Al2O3 layer on leakage current properties for DRAM capacitor with ZrO2/Al2O3/ZrO2 multilayer-シリコン材料・デバイス. 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報. 2016. 116. 118. 27-32
more...
Patents (2):
  • 減速集束イオンビーム堆積装置
  • 量子井戸箱の形成方法
Education (4):
  • Waseda University School of Science and Engineering
  • Waseda University Graduate School of Science and Engineering
  • Waseda University, School of Science and Engineering, Department of Electronics and Communication
  • Waseda University, School of Science and Engineering, Department of Electronics
Professional career (1):
  • Doctor of Engineering
Association Membership(s) (4):
米国材料学会 ,  応用物理学会 ,  The Japan Society of Applied Physics ,  Material Research Society
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