Rchr

J-GLOBAL ID：200901046462290037 Update date: May. 16, 2020

Kim Hoon

キムフン | Kim Hoon

Affiliation and department：

Research keywords (4)： CVD , Ru , 信頼性 , 銅配線

Research theme for competitive and other funds (1)：

Process development of highly reliable Cu interconnect by material design and oxidation / reduction chemistry of Cu-CVD

MISC (6)：

H Kim, Y Kojima, H Sato, N Yoshii, S Hosaka, Y Shimogaki. Influence of crystal orientation of Ru under-layer on initial growth of copper chemical vapor deposition. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS. 2006. 45. 8-11. L233-L235
Material consideration on Ta, Mo, Ru and Os as glue layer for ULSI Cu interconnection. Jpn. J. Appl. Phys. 2006
Effect of Ru crystal orientation on the adhesion characteristics of Cu for ULSI interconnects. Appl. Surf. Sci. 2006
H Kim, T Koseki, T Ohba, T Ohta, Y Kojima, H Sato, Y Shimogaki. Process design of Cu(Sn) alloy deposition for highly reliable ultra large-scale integration interconnects. THIN SOLID FILMS. 2005. 491. 1-2. 221-227
Effects of Ag Addition on the Resistivity, Texture and Surface Morphology of Cu Metallization. Jpn. J. Appl. Phys. 2005. 44, L1278

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