Rchr
J-GLOBAL ID：200901047748868075
Update date: Feb. 01, 2024
HIGASHIWAKI Masataka
ヒガシワキ マサタカ | HIGASHIWAKI Masataka
Affiliation and department：
Job title：
Professor
Homepage URL (1)：
http://www2.nict.go.jp/green/
Research field (4)：
Electronic devices and equipment
, Electric/electronic material engineering
, Nano/micro-systems
, Nanomaterials
Research keywords (4)：
Gallium oxide
, Molecular beam epitaxy (MBE)
, transistor
, Gallium nitride
Research theme for competitive and other funds (9)：
- 2021 - 2024 次世代省エネ型デバイス関連技術の開発・実証事業
- 2019 - 2022 Formation of directly-bonded interface between gallium oxide and group-IV semiconductor for power device application
- 2018 - 2021 マイクロ波帯酸化ガリウムトランジスタの研究開発
- 2014 - 2019 酸化ガリウムパワーデバイス基盤技術の研究開発
- 2013 - 2015 Pioneering development of fundamental technologies for fabrication of wide bandgap III-group oxide/nitride heterostructures
- 2011 - 2014 超高耐圧酸化ガリウムパワーデバイスの研究開発
- 2010 - 2013 Interface control and device application of III-oxide/nitride semiconductor composite structures
- 2005 - 2006 極高温用GaN/AlGaNヘテロ構造ホール素子の作製と応用
- 1998 - 1999 (775)BGaAs基板上に分子線結晶成長した自然形成型高密度GaAs量子細線
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Papers (201)：
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Rie Togashi, Ken Goto, Masataka Higashiwaki, Yoshinao Kumagai. Thermodynamic analysis of molecular beam epitaxy of group-III sesquioxides. JAPANESE JOURNAL OF APPLIED PHYSICS. 2023. 62. 5
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Masataka Higashiwaki. β-Ga2O3 material properties, growth technologies, and devices: a review. AAPPS Bulletin. 2022
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Rie Togashi, Haruka Ishida, Ken Goto, Masataka Higashiwaki, Yoshinao Kumagai. Thermodynamic analysis of β-Ga2O3 growth by molecular beam epitaxy. Japanese Journal of Applied Physics. 2022
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Joel B. Varley, Bo Shen, Masataka Higashiwaki. Wide bandgap semiconductor materials and devices. Journal of Applied Physics. 2022
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Jianbo Liang, Daiki Takatsuki, Masataka Higashiwaki, Yasuo Shimizu, Yutaka Ohno, Yasuyoshi Nagai, Naoteru Shigekawa. Fabrication of beta-Ga2O3/Si heterointerface and characterization of interfacial structures for high-power device applications. JAPANESE JOURNAL OF APPLIED PHYSICS. 2022. 61. SF
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MISC (22)：
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熊谷 義直, 村上 尚, 倉又 朗人, 東脇 正高. HVPE法による高品質酸化ガリウムエピタキシャル成長技術. 応用物理. 2017. 86. 2. 107-111
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東脇 正高, 熊谷 義直, 村上 尚, 倉又 朗人. エネルギーデバイス最前線 酸化ガリウムパワーデバイスの最新技術と実用化への課題. エネルギーデバイス = Energy device. 2016. 3. 6. 43-47
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小西 敬太, 上村 崇史, ワン マンホイ, 佐々木 公平, 倉又 朗人, 山腰 茂伸, 東脇 正高. Ga2O3上に堆積したSiO2膜におけるポストアニールの影響 (電子デバイス). 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報. 2016. 116. 158. 11-15
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ワン マンホイ, 東脇 正高, 佐々木 公平, 倉又 朗人, 山腰 茂伸. 高耐圧ディスプレッション型フィールドプレートGa2O3 MOSFET (電子デバイス研究会 次世代化合物半導体デバイスの機能と応用). 電気学会研究会資料. EDD = The papers of technical meeting on electron devices, IEE Japan. 2016. 2016. 36. 29-33
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東脇正高, WONG Man Hoi, 小西敬太, 佐々木公平, 佐々木公平, 後藤健, 後藤健, 野村一城, THIEU Quang Tu, 富樫理恵, et al. State-of-the-art technology on gallium oxide power devices. 電子情報通信学会技術研究報告. 2016. 115. 402(ED2015 112-120). 13-18
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Patents (26)：
Books (13)：
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次世代パワー半導体の開発・評価と実用化
エヌ・ティー・エス 2022 ISBN:4860437675
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Wide bandgap semiconductors for power electronics : materials, devices, applications
Wiley-VCH 2022 ISBN:3527346716
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次世代パワー半導体の開発動向と応用展開
シーエムシー出版 2021 ISBN:9784781316130
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Ultrawide bandgap semiconductors
Elsevier 2021 ISBN:9780128228708
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次世代パワー半導体デバイス・実装技術の基礎-Siから新材料への新展開- (設計技術シリーズ89)
科学情報出版株式会社 2021 ISBN:4904774957
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Lectures and oral presentations (48)：
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Novel wide bandgap semiconductor Ga<sub>2</sub>O<sub>3</sub> transistors
(International Semiconductor Device Research Symposium (ISDRS 2013) 2013)
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Depletion-mode Ga<sub>2</sub>O<sub>3</sub> MOSFETs on β-Ga<sub>2</sub>O<sub>3</sub> (010) substrates with Si-ion-implanted channel and contact
(2013 IEEE International Electron Devices Meeting (IEDM 2013) 2013)
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Structural and electrical properties of Al<sub>2</sub>O<sub>3</sub>/Ga<sub>2</sub>O<sub>3</sub> MOS diode on β-Ga<sub>2</sub>O<sub>3</sub> (010)
(2013 MRS Fall Meeting & Exhibit 2013)
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Research and development on Ga<sub>2</sub>O<sub>3</sub> transistors and diodes
(1st IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA 2013) 2013)
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Research and development on Ga<sub>2</sub>O<sub>3</sub> power devices
(2013 International Conference on Solid State Devices and Materials (SSDM 2013) 2013)
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Education (3)：
- 1996 - 1998 Osaka University Graduate School of Engineering Science
- 1994 - 1996 Osaka University Graduate School of Engineering Science
- 1990 - 1994 Osaka University School of Engineering Science
Professional career (1)：
- Ph. D (Engineering) (Osaka University)
Work history (17)：
- 2022/04 - 現在 Osaka Metropolitan University Department of Physics and Electronics Professor
- 2022/04 - 現在 National Institute of Information and Communications Technology Green ICT Device Laboratory, Koganei Frontier Research Center, Advanced ICT Research Institute Director
- 2021/05 - 現在 University of Bristol The Center for Device Thermography and Reliability (CDTR) Honorary Professor(兼務)
- 2016/03 - 現在 (株)ノベルクリスタルテクノロジー 顧問(兼務)
- 2021/04 - 2022/03 National Institute of Information and Communications Technology Green ICT Device Laboratory, Koganei Frontier Research Center, Advanced ICT Research Institute Director
- 2016/04 - 2021/03 National Institute of Information and Communications Technology Green ICT Device Advanced Development Center, Advanced ICT Research Institute Director
- 2017/04 - 2018/03 Hokkaido University Research Center for Integrated Quantum Electronics
- 2011/04 - 2017/03 Kogakuin University
- 2013/12 - 2016/03 National Institute of Information and Communications Technology Advanced ICT Research Institute, Green ICT Device Advanced Development Center Director
- 2012/10 - 2013/11 National Institute of Information and Communications Technology Advanced ICT Research Institute Chief Senior Researcher
- 2010/04 - 2013/03 JST PRESTO Researcher
- 2010/04 - 2012/09 National Institute of Information and Communications Technology Senior Researcher
- 2011/04 - 2012/03 Osaka University Graduate School of Engineering Science
- 2007/09 - 2010/03 University of California, Santa Barbara Department of Electrical and Computer Engineering, Project Scientist
- 2004/10 - 2007/08 National Institute of Information and Communications Technology Senior Researcher
- 2000/04 - 2004/09 CRL (currently, NICT) Researcher
- 1998/04 - 2000/03 Japan Society for the Promotion of Science Postdoctral Fellow
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Committee career (9)：
- 2021/04 - 現在 一般社団法人ワイドギャップ半導体学会 企画主査
- 2020/04 - 現在 応用物理学会 先進パワー半導体分科会 幹事
- 2018 - 現在 Air Force Office of Scientific Research (AFOSR) Multidisciplinary Research Program of the University Research Initiative (MURI), "Gallium Oxide Materials Science and Engineering (GAME)", USA Scientific Advisory Board Member
- 2016 - 現在 Leibniz Science Campus "Growth and Fundamentals of Oxides for Electronic Applications (GraFOx)", Germany International Advisory Board Member
- 2013/04 - 現在 電気学会 次世代化合物電子デバイスとその応用調査専門委員会 委員
- 2010/06 - 現在 電子情報通信学会 電子デバイス研究専門委員会 委員、幹事補佐、幹事
- 2006/04 - 2021/03 日本学術振興会「ワイドギャップ半導体光・電子デバイス」第162委員会 委員、企画委員、企画幹事
- 2013/04 - 2015/03 IEEE東京セクション Chapter Promotion Committee Vice Chair
- 2013/04 - 2015/03 応用物理学会 論文賞委員会 委員
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Awards (10)：
- 2022/04 - Ichimura Foundation for New Technology The 54th Ichimura Prize in Science for Distinguished Achievement Pioneering research and development on gallium oxide devices
- 2021/11 - Clarivate Analytics 2021 Highly Cited Researcher
- 2018/02 - University of California, Santa Barbara Nakamura Lecturer Award
- 2015/02 - Japan Society of the Promotion of Science The JSPS Award
- 2013/07 - The 27th Fuji-Sankei Business i Advanced Technology Award Research and development of gallium oxide power devices
- 2009/03 - Marubun Research Promotion Foundation The Research Encouragement Award Research and development of ultra-high-frequency gallium nitride transistors
- 2007/10 - The International Symposium on Compound Semiconductors (ISCS) The Young Scientist Award For contributions to the development of GaN-based millimeter-wage high electron mobility Transistors
- 2006 - 第28回応用物理学会論文賞(JJAP論文賞)
- 2005 - 第27回応用物理学会論文賞(JJAP論文奨励賞)
- 2004 - 第16回応用物理学会講演奨励賞
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Association Membership(s) (3)：
THE INSTITUTE OF ELECTRONICS, INFORMATION AND COMMUNICATION ENGINEERS.
, IEEE
, THE JAPAN SOCIETY OF APPLIED PHYSICS
