Rchr

J-GLOBAL ID：200901051457319969 Update date: May. 07, 2020

BAE In-tae

ベインテ | BAE In-tae

Affiliation and department：
Job title： Others

Research field (1)： Metallic materials

Research theme for competitive and other funds (2)：

イオンおよび電子ビームによる半導体材料の改質
Modification of semiconductor materials by ion and electron beam irradiation

MISC (3)：

IT Bae, TY Seong, YJ Park, EK Kim. Structural study of GaN grown on (001) GaAs by organometallic vapor phase epitaxy. JOURNAL OF ELECTRONIC MATERIALS. 1999. 28. 7. 873-877
TY Seong, IT Bae, CJ Choi, DY Noh, Y Zhao, CW Tu. Microstructures of GaN1-xPx layers grown on (0001)GaN substrates by gas source molecular beam epitaxy. JOURNAL OF APPLIED PHYSICS. 1999. 85. 6. 3192-3197
Ordening and microstructures of GaN_1-xAs_x layers grown on(0001)GaN/Sapphire substrates. Electrochemical and Solid-state Letters. 2. 2. 94

Education (2)：

- 1998 光州科学技術院新素材工学科半導体材料
- 1996 釜山大学校工学部金属工学

Professional career (1)：

(BLANK)

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