Rchr
J-GLOBAL ID：200901057107029249   Update date: Apr. 18, 2024

Shiraishi Kenji

Shiraishi Kenji
Research field  (1)： Thin-film surfaces and interfaces
Research theme for competitive and other funds  (24)：
  • 2020 - 2023 省エネルギー次世代半導体デバイス開発のための量子論マルチシミュレーション
  • 2016 - 2021 省エネルギー社会の実現に資する次世代半導体研究開発
  • 2016 - 2019 IoT推進のための横断技術開発プロジェクト
  • 2014 - 2019 縦型BC-MOSFETのデバイス中の伝導現象の理論
  • 2015 - 2018 Synthesis of New Group IV Two Dimensional Materials
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Papers (487)：
  • Hiroyuki Kageshima, Toru Akiyama, Kenji Shiraishi. First-principles study on barrier height of silicon emission from interface into oxide during silicon thermal oxidation. Japanese Journal of Applied Physics. 2024. 63. 4. 04SP08-04SP08
  • Toru Akiyama, Hiroyuki Kageshima, Kenji Shiraishi. Reaction of NO molecule at 4H-SiC/SiO2 interface and its orientation dependence: a first-principles study. Japanese Journal of Applied Physics. 2024. 63. 3. 03SP80-03SP80
  • Hiroyuki Kageshima, Toru Akiyama, Kenji Shiraishi. First-principles study on silicon emission from interface into oxide during silicon thermal oxidation. Materials Science in Semiconductor Processing. 2023. 162. 107527-107527
  • Keisuke Morishita, Yosuke Harashima, Masaaki Araidai, Tetsuo Endoh, Kenji Shiraishi. Effect of MgO Grain Boundaries on the Interfacial Perpendicular Magnetic Anisotropy in Spin-Transfer Torque Magnetic Random Access Memory: A First-Principles Study. IEEE Transactions on Magnetics. 2023. 59. 4. 1-6
  • Yutaro Ogawa, Masaaki Araidai, Tetsuo Endoh, Kenji Shiraishi. Effect of interfacial nitrogen defects on tunnel magnetoresistance in an Fe/MgO/Fe magnetic tunnel junction. Journal of Applied Physics. 2022. 132. 21. 213904-213904
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MISC (94)：
  • 松田隼, 秋山亨, 畠山哲夫, 白石賢二, 中山隆史. Ab initio study for orientation dependence of band alignments at 4H-SiC/SiO2 interface. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2023. 70th
  • 影島博之, 秋山亨, 白石賢二. First-principles Study on Silicon Emission from Interface into Oxide during Silicon Thermal Oxidation. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2023. 70th
  • 松田隼, 秋山亨, 畠山哲夫, 白石賢二, 中山隆史. Hybrid-density functional calculation study for orientation dependence of band alignments at 4H-SiC/SiO2 interface. 応用物理学会秋季学術講演会講演予稿集(CD-ROM). 2023. 84th
  • 秋山亨, 清水紀志, 伊藤智徳, 影島博之, 白石賢二. Ab initio study for reaction of nitrogen oxide and NH3 at 4H-SiC/SiO2 interface. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2022. 69th
  • 秋山亨, 清水紀志, 伊藤智徳, 影島博之, 白石賢二. Ab initio study for orientation dependence of nitrogen incorporation at 4H-SiC/SiO2 interface. 応用物理学会秋季学術講演会講演予稿集(CD-ROM). 2021. 82nd
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Lectures and oral presentations  (94)：
  • First Principles Studires on the Complex of the Mg Impurity and the Screw Dislocations in GaN
    (WebCongress on Computational Materials and Modeling, online 2021)
  • First principles molecular dynamics as a tool to explore complex reactions in GaN
    (International Symposium on Wide Gap Semiconductor Growth, Process and Device Simulation, online 2021)
  • Structures, electron states and reactions on growing surfaces and at device interfaces of SiC and GaN
    (International Symposium on Wide Gap Semiconductor Growth, Process and Device Simulation, online 2021)
  • What are nesesaary for future non-volatile memories?
    (Webinar on Science, Engineering and Technology, online 2020)
  • Atomic and Electronic Structures of Complexes of Screw Dislocations and Mg Impurities in GaN
    (International Webinar on Nanotechnology, online 2020)
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Education (1)：
  • 1978 - 1988 The University of Tokyo Graduate School, Division of Science
Work history (7)：
  • 2015/10 - 現在 Nagoya University Institute of Materials and Systems for Sustainability Professor
  • 2013/05 - 2015/09 Nagoya University Graduate School of Engineering, Computational Science and Engineering
  • 2007/10/16 - 2013/05/15 筑波大学 教授 大学院数理物質科学研究科
  • 2007/04/01 - 2007/10/15 筑波大学 准教授 大学院数理物質科学研究科
  • 2004/04/01 - 2007/03/31 筑波大学 助教授 大学院数理物質科学研究科
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Association Membership(s) (5)：
IEEE ,  日本結晶成長学会 ,  日本物理学会 ,  応用物理学会 ,  日本表面科学会
※ Researcher’s information displayed in J-GLOBAL is based on the information registered in researchmap. For details, see here.

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