Rchr
J-GLOBAL ID：200901057381490718
Update date: Mar. 27, 2008
Sakamoto Wataru
サカモト ワタル | Sakamoto Wataru
Affiliation and department：
Job title：
Graduate Student(Doctral Course)
Research field (1)：
Electronic devices and equipment
Research keywords (4)：
集積回路
, 電子デバイス
, Integrated Circuit
, Electronic Device
Research theme for competitive and other funds (2)：
- 2003 - 2006 SGTの駆動電流に関する研究
- 2003 - 2006 Study of Current Drivability of SGT
MISC (3)：
-
強反転領域におけるSGTの移動度増加. 電子情報通信学会論文誌C. 2005. Vol. J88-C, No. 5, pp. 338-339
-
Reduction of Pass-gate leakage by silicon-thickness thinning in double-gate MOSFEE. Silicon-on-Insulator Technology and Devices XI, the Electrochemical Society Inc. 2003. PV2003-05. 331-336
-
Reduction of Pass-gate leakage by silicon-thickness thinning in double-gate MOSFEE. Silicon-on-Insulator Technology and Devices XI, the Electrochemical Society Inc. 2003. PV2003-05. 331-336
Education (2)：
- - 2000 Tohoku University Faculty of Engineering
- - 2000 Tohoku University School of Engineering Department of Electronic Engineering
Professional career (1)：
- Master(Engineering) (Tohoku University)
Association Membership(s) (3)：
電子情報通信学会
, Information and Communication Engineers
, The Institute of Electronics
